A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs

2005 ◽  
Vol 49 (1) ◽  
pp. 43-48 ◽  
Author(s):  
Wenwei Yang ◽  
Xinhong Cheng ◽  
Yuehui Yu ◽  
Zhaorui Song ◽  
Dashen Shen
Keyword(s):  
Thin Film ◽  
Analytical Model ◽  
Breakdown Voltage ◽  
Power Mosfets

A new analytical model for lateral breakdown voltage of double-gate power MOSFETs

2011 ◽  
Author(s):  
Hossein Mohammad ◽  
Huda Abdullah ◽  
Chang Fu Dee ◽  
P. Susthitha Menon ◽  
Burhanuddin Yeop Majlis
Keyword(s):  
Analytical Model ◽  
Breakdown Voltage ◽  
Double Gate ◽  
Power Mosfets

Analytical model and temperature dependence of the thin film SOI FET

1995 ◽  
Vol 38 (5) ◽  
pp. 949-959 ◽  
Author(s):  
S Scheinert ◽  
G Paasch ◽  
D Schipanski
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Analytical Model

An analytical model for the above-threshold characteristics of polysilicon thin-film transistors

1995 ◽  
Vol 42 (7) ◽  
pp. 1240-1246 ◽  
Author(s):  
Horng Nan Chern ◽  
Chung Len Lee ◽  
Tan Fu Lei
Keyword(s):  
Thin Film ◽  
Analytical Model ◽  
Thin Film Transistors

A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1164-1167 ◽  
Author(s):  
Du-Zen Peng ◽  
Ting-Chang Chang ◽  
Chin-Fu Liu ◽  
Ping-Hung Yeh ◽  
Po-Tsun Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

scholarly journals Design of thin film solar cells based on a unified simple analytical model

2017 ◽  
Vol 15 (6) ◽  
pp. 599-608 ◽  
Author(s):  
Armando Acevedo-Luna ◽  
Roberto Bernal-Correa ◽  
Jorge Montes-Monsalve ◽  
Arturo Morales-Acevedo
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Analytical Model ◽  
Thin Film Solar Cells ◽  
Simple Analytical Model

Cross-linked poly(hydroxy imide) gate-insulating materials for low-temperature processing of organic thin-film transistors

2018 ◽  
Vol 6 (48) ◽  
pp. 13359-13366 ◽  
Author(s):  
Joo-Young Kim ◽  
Ji Whan Kim ◽  
Eun Kyung Lee ◽  
Jeong-Il Park ◽  
Bang-Lin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Breakdown Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Insulating Materials ◽  
Plastic Substrates ◽  
Insulating Material ◽  
Low Temperature Processing

This paper reports a polymeric gate insulating material of poly(hydroxy imide) cured at the low temperature of 130 °C for the application to organic thin-film transistors on plastic substrates exhibiting high breakdown voltage and no hysteresis.

Characteristics of the Breakdown Voltage of Power MOSFETs after Total Dose Irradiation

1986 ◽  
Vol 33 (6) ◽  
pp. 1460-1464 ◽  
Author(s):  
R. D. Pugh ◽  
A. H. Johnston ◽  
K. F. Galloway
Keyword(s):  
Total Dose ◽  
Breakdown Voltage ◽  
Power Mosfets ◽  
Dose Irradiation

Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates

2020 ◽  
Vol 29 (4) ◽  
pp. 047102
Author(s):  
Yi-Ni He ◽  
Lian-Wen Deng ◽  
Ting Qin ◽  
Cong-Wei Liao ◽  
Heng Luo ◽  
...  
Keyword(s):  
Thin Film ◽  
Analytical Model ◽  
Surface Potential ◽  
Thin Film Transistors
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