DC characterization of 4H-SiC depletion mode MOS field effect transistor

Solid-State Electronics ◽

10.1016/j.sse.2005.12.023 ◽

2006 ◽

Vol 50 (3) ◽

pp. 384-387 ◽

Author(s):

P. Zhao ◽

Rusli ◽

C.L. Zhu ◽

H. Wang ◽

C.C. Tin

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Dc Characterization

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Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors

The Analyst ◽

10.1039/c5an02328a ◽

2016 ◽

Vol 141 (9) ◽

pp. 2704-2711 ◽

Author(s):

Charles Mackin ◽

Tomás Palacios

Keyword(s):

Measurement System ◽

Field Effect ◽

Large Scale ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Sensor Systems ◽

Array Architecture ◽

Effect Transistor ◽

Dc Characterization

This work reports a novel graphene electrolyte-gated field-effect transistor (EGFET) array architecture along with a compact, self-contained, and inexpensive measurement system that allows DC characterization of hundreds of graphene EGFETs as a function ofVDSandVGSwithin a matter of minutes.

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Direct-current and radio-frequency characterization of submicron striped-channel field effect transistor structures using focused ion beam and electron-beam lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585948 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2945 ◽

Author(s):

M. M. Hashemi

Keyword(s):

Electron Beam ◽

Radio Frequency ◽

Direct Current ◽

Electron Beam Lithography ◽

Field Effect ◽

Field Effect Transistor ◽

Focused Ion Beam ◽

Ion Beam ◽

Effect Transistor

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Characterization of bacterial deposits formed in vivo on hydrogen-ion-sensitive field-effect transistor electrodes and enamel surfaces.

Japanese Journal of Oral Biology ◽

10.2330/joralbiosci1965.31.102 ◽

1989 ◽

Vol 31 (1) ◽

pp. 102-106 ◽

Author(s):

Etsuro Hoshino ◽

Michiko Sato ◽

Sasano Takashi ◽

Kohichi Kota

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Hydrogen Ion ◽

Effect Transistor

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Characterization of Nanowire Field Effect Transistor and Comparison Based on Different Performance Criteria

2019 International Conference on Sustainable Technologies for Industry 4.0 (STI) ◽

10.1109/sti47673.2019.9068034 ◽

2019 ◽

Author(s):

Sabrina Hassan Moon ◽

Naima Nasrin Nisha ◽

Jibesh Kanti Saha

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Performance Criteria ◽

Effect Transistor

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Characterization of field effect transistor with TiO2nanotube channel fabricated by dielectrophoresis

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/18/8/082019 ◽

2011 ◽

Vol 18 (8) ◽

pp. 082019 ◽

Author(s):

M Ishii ◽

M Terauchi ◽

T Yoshimura ◽

T Nakayama ◽

N Fujimura

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Fabrication and characterization of a charge-biased CMOS-MEMS resonant gate field effect transistor

Journal of Micromechanics and Microengineering ◽

10.1088/0960-1317/24/9/095005 ◽

2014 ◽

Vol 24 (9) ◽

pp. 095005 ◽

Author(s):

C H Chin ◽

C S Li ◽

M H Li ◽

Y L Wang ◽

S S Li

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Cmos Mems ◽

Effect Transistor ◽

Fabrication And Characterization ◽

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Characterization of a sol-gel based high-k dielectric field effect transistor for cryogenic operation

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3006019 ◽

2008 ◽

Vol 26 (6) ◽

pp. 1887-1891 ◽

Author(s):

M. Ziaur Rahman Khan ◽

D. G. Hasko ◽

M. S. M. Saifullah ◽

M. E. Welland

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Sol Gel ◽

High K ◽

Effect Transistor ◽

High K Dielectric

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Fabrication and characterization of a biologically sensitive field-effect transistor using a nanocrystalline diamond thin film

Applied Physics Letters ◽

10.1063/1.1808885 ◽

2004 ◽

Vol 85 (16) ◽

pp. 3626-3628 ◽

Author(s):

Wensha Yang ◽

Robert J. Hamers

Keyword(s):

Thin Film ◽

Field Effect ◽

Field Effect Transistor ◽

Nanocrystalline Diamond ◽

Diamond Thin Film ◽

Effect Transistor ◽

Fabrication And Characterization

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Characterization of edge oscillation in a traveling-wave field-effect transistor

Physical Review E ◽

10.1103/physreve.88.012907 ◽

2013 ◽

Vol 88 (1) ◽

Author(s):

Koichi Narahara

Keyword(s):

Traveling Wave ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Direct measurement and characterization of n+ superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy

Applied Physics Letters ◽

10.1063/1.1522819 ◽

2002 ◽

Vol 81 (21) ◽

pp. 3993-3995 ◽

Author(s):

P. A. Rosenthal ◽

Y. Taur ◽

E. T. Yu

Keyword(s):

Metal Oxide ◽

Direct Measurement ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Cross Sectional ◽

Effect Transistor

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