High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors

2008 ◽  
Vol 52 (3) ◽  
pp. 443-448 ◽  
Author(s):  
E. Fortunato ◽  
P. Barquinha ◽  
G. Gonçalves ◽  
L. Pereira ◽  
R. Martins
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Semiconductors ◽  
Indium Zinc Oxide ◽  
Low Threshold

Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

2013 ◽  
Vol 34 (7) ◽  
pp. 894-896 ◽  
Author(s):  
Se Yeob Park ◽  
Cheol Seong Hwang ◽  
Hyeong Joon Kim ◽  
Jae Kyeong Jeong ◽  
Ji Hun Song ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Bias Stability

Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor

2020 ◽  
Vol 20 (11) ◽  
pp. 6675-6678
Author(s):  
Donghyeon Lee ◽  
Pyungho Choi ◽  
Areum Park ◽  
Woojin Jeon ◽  
Donghee Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Oxide Thin Film ◽  
Molar Ratio ◽  
Threshold Voltage Shift ◽  
Indium Zinc Oxide ◽  
Process Channel

In this study, we fabricated Hf-doped indium zinc oxide thin-film transistors (HIZO TFTs) using a solution process. Channel layers of the TFTs were optimized by varying the molar ratio of Hf in the channel layers. The electrical properties of the fabricated devices were compared to gallium indium zinc oxide (GIZO). HIZO TFTs showed 0.12 V threshold voltage, 0.45 V/decade subthreshold swing and 1.24 × 106 on–off current ratio, which were excellent compared to that of GIZO. In particular, when a positive gate bias stress of 10 V was applied for 103 s, the HIZO TFT exhibited a lower threshold voltage shift of 1.11 V than the GIZO TFT (1.88 V). These results originate from the higher oxygen bonding with Hf in IZO compared to Ga atoms. We confirmed that Hf acts as an excellent carrier suppressor whose properties exceed those of Ga.

Thin-Film Transistors With Neodymium-Incorporated Indium–Zinc-Oxide Semiconductors

2016 ◽  
Vol 63 (5) ◽  
pp. 1916-1920 ◽  
Author(s):  
Erlong Song ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Semiconductors ◽  
Indium Zinc Oxide

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Cyanophenoxy-Substituted Silicon Phthalocyanines for Low Threshold Voltage n-Type Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Silicon Phthalocyanines ◽  
Low Threshold

Solution-Processed Indium-Zinc Oxide Transparent Thin-Film Transistors

2008 ◽  
Vol 11 (1) ◽  
pp. H7 ◽  
Author(s):  
Chaun Gi Choi ◽  
Seok-Jun Seo ◽  
Byeong-Soo Bae
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Indium Zinc Oxide
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