Thin-Film Transistors With Neodymium-Incorporated Indium–Zinc-Oxide Semiconductors

2016 ◽  
Vol 63 (5) ◽  
pp. 1916-1920 ◽  
Author(s):  
Erlong Song ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...


2008 ◽  
Vol 11 (1) ◽  
pp. H7 ◽  
Author(s):  
Chaun Gi Choi ◽  
Seok-Jun Seo ◽  
Byeong-Soo Bae

2018 ◽  
Vol 18 (9) ◽  
pp. 5913-5918 ◽  
Author(s):  
Kiwon Lim ◽  
Pyungho Choi ◽  
Sangsub Kim ◽  
Hyunki Kim ◽  
Minsoo Kim ◽  
...  

2019 ◽  
Vol 30 (14) ◽  
pp. 12929-12936
Author(s):  
Dong Lin ◽  
Xudong Zheng ◽  
Jianwen Yang ◽  
Kaiwen Li ◽  
Jingjing Shao ◽  
...  

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