Analytical models for the electric field distributions and breakdown voltage of Triple RESURF SOI LDMOS

2012 ◽  
Vol 69 ◽  
pp. 89-93 ◽  
Author(s):  
Xiarong Hu ◽  
Bo Zhang ◽  
Xiaorong Luo ◽  
Zhaoji Li
1960 ◽  
Vol 118 (3) ◽  
pp. 626-631 ◽  
Author(s):  
Bernard Mozer ◽  
Michel Baranger

2013 ◽  
Vol 845 ◽  
pp. 372-377 ◽  
Author(s):  
Nabipour Afrouzi Hadi ◽  
Zulkurnain Abdul-Malek ◽  
Saeed Vahabi Mashak ◽  
A.R. Naderipour

Cross-linked polyethylene is widely used as electrical insulation because of its excellent electrical properties such as low dielectric constant, low dielectric loss and also due to its excellent chemical resistance and mechanical flexibility. Nevertheless, the most important reason for failure of high voltage equipment is due to its insulation failure. The electrical properties of an insulator are affected by the presence of cavities within the insulating material, in particular with regard to the electric field and potential distributions. In this paper, the electric field and potential distributions in high voltage cables containing single and multiple cavities are studied. Three different insulating media, namely PE, XLPE, and PVC was modeled. COMSOL software which utilises the finite element method (FEM) was used to carry out the simulation. An 11kV underground cable was modeled in 3D for better observation and analyses of the generated voltage and field distributions. The results show that the electric field is affected by the presence of cavities in the insulation. Furthermore, the field strength and uniformity are also affected by whether cavities are radially or axially aligned, as well as the type of the insulating solid. The effect of insulator type due the presence of cavities was seen most prevalent in PVC followed by PE and then XLPE.


2021 ◽  
Author(s):  
A.S. Augustine Fletcher ◽  
D Nirmal ◽  
J Ajayan ◽  
L Arivazhagan ◽  
Husna Hamza K ◽  
...  

Abstract The influence of double deck T-gate on LG=0.2 μm AlN/GaN/AlGaN HEMT is analysed in this paper. The T-gate supported with Silicon Nitride provides a tremendous mechanical reliability. It drops off the crest electric-field at gate edges and postponing the breakdown voltage of a device. A 0.2-μm double deck T-gate HEMT on Silicon Carbide substrate offer fMAX of 107 Giga Hertz, fT of 60 Giga Hertz and the breakdown voltage of 136 Volts. Furthermore, it produces the maximum-transconductance and drain-current of 0.187 Siemens/mm and 0.41 Ampere/mm respectively. In addition, the lateral electric-field noticed at gate-edge shows 2.1×106 Volts/cm. Besides, the double deck T-gate AlN/GaN HEMT achieves a 45 % increment in breakdown voltage compared to traditional GaN-HEMT device. Moreover, it reveals a remarkable Johnson figure-of-merit of 7.9 Tera Hertz Volt. Therefore, the double deck T-gate on AlN/GaN/AlGaN HEMT is the superlative device for 60 GHz V-band satellite application.


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