Temperature Dependent Instability of Drain Bias Stress in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2013-01/23/928 ◽

2013 ◽

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Temperature Dependent ◽

Bias Stress ◽

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Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Chinese Physics B ◽

10.1088/1674-1056/24/7/077307 ◽

2015 ◽

Vol 24 (7) ◽

pp. 077307 ◽

Author(s):

Hui-Min Qian ◽

Guang Yu ◽

Hai Lu ◽

Chen-Fei Wu ◽

Lan-Feng Tang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Temperature Dependent ◽

Bias Stress ◽

Electrical Instability ◽

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P-139L:Late-News Poster: AC Gate-Drain-Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications

SID Symposium Digest of Technical Papers ◽

10.1002/j.2168-0159.2012.tb05991.x ◽

2012 ◽

Vol 43 (1) ◽

pp. 1126-1128 ◽

Author(s):

Chao-Yu Yang ◽

Shih-Che Huang ◽

Hao-Lin Chiu ◽

Ting Hsieh ◽

Bo-Liang Yeh ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Stress Study ◽

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Drain-Bias Transient Instability of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3012945 ◽

2020 ◽

Vol 67 (10) ◽

pp. 4526-4529

Author(s):

Yi-Hsui Lai ◽

Ruei-Ping Lin ◽

Tuo-Hung Hou

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Transient Instability ◽

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Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

Applied Physics Letters ◽

10.1063/1.4902867 ◽

2014 ◽

Vol 105 (21) ◽

pp. 213505 ◽

Author(s):

Kwang-Won Jo ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Microwave Irradiation ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2bilayer passivation under gate bias stress

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.02bc17 ◽

2016 ◽

Vol 55 (2S) ◽

pp. 02BC17 ◽

Author(s):

Ching-Lin Fan ◽

Fan-Ping Tseng ◽

Bo-Jyun Li ◽

Yu-Zuo Lin ◽

Shea-Jue Wang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Gate Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

Indium Gallium ◽

Gate Bias Stress

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Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

Journal of Applied Physics ◽

10.1063/1.3662869 ◽

2011 ◽

Vol 110 (11) ◽

pp. 114503 ◽

Author(s):

Md Delwar Hossain Chowdhury ◽

Sang Hyun Ryu ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Annealing Time ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature

Journal of Applied Physics ◽

10.1063/1.4870458 ◽

2014 ◽

Vol 115 (13) ◽

pp. 134502 ◽

Author(s):

Jae Gwang Um ◽

Mallory Mativenga ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Elevated Temperature ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

Applied Physics Letters ◽

10.1063/1.4948765 ◽

2016 ◽

Vol 108 (18) ◽

pp. 182104 ◽

Author(s):

Eungtaek Kim ◽

Choong-Ki Kim ◽

Myung Keun Lee ◽

Tewook Bang ◽

Yang-Kyu Choi ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Gate Insulator ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Positive Bias ◽

Zinc Oxide Thin Film ◽

Bias Stress ◽

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N2O Plasma Treatment Suppressed Temperature-dependent Point Defects Formation with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

ECS Meeting Abstracts ◽

10.1149/ma2012-01/21/903 ◽

2012 ◽

Keyword(s):

Thin Film ◽

Point Defects ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Temperature Dependent ◽

Indium Gallium ◽

Dependent Point

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Suppressed Temperature-dependent Sub-threshold Leakage Current of amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors by Nitrous Oxide Plasma Treatment

ECS Meeting Abstracts ◽

10.1149/ma2012-01/22/934 ◽

2012 ◽

Keyword(s):

Thin Film ◽

Nitrous Oxide ◽

Plasma Treatment ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Temperature Dependent ◽

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