Characteristic function approach to analytical parameter extraction, verification, and circuit calibration for small-signal equivalent circuit of field effect transistors

2020 ◽  
Vol 165 ◽  
pp. 107753
Author(s):  
F.Y. Huang ◽  
Z.N. Wei ◽  
Y.M. Zhang ◽  
X.S. Tang ◽  
N. Jiang
Keyword(s):  
Characteristic Function ◽  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Parameter Extraction ◽  
Function Approach ◽  
Small Signal ◽  
Analytical Parameter

scholarly journals Analytical Parameter Extraction for Small-Signal Equivalent Circuit of 3D FinFET Into Sub-THz Range

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 19752-19761 ◽  
Author(s):  
Muyang Qin ◽  
Yabin Sun ◽  
Xiaojin Li ◽  
Yanling Shi
Keyword(s):  
Equivalent Circuit ◽  
Parameter Extraction ◽  
Small Signal ◽  
Analytical Parameter ◽  
Thz Range

An Improved Cut-Off Frequency Model With a Modified Small-Signal Equivalent Circuit in Graphene Field-Effect Transistors

2015 ◽  
Vol 36 (12) ◽  
pp. 1351-1354 ◽  
Author(s):  
Lingfei Wang ◽  
Ling Li ◽  
Nianduan Lu ◽  
Zhuoyu Ji ◽  
Wei Wang ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Small Signal ◽  
Frequency Model

Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit

2016 ◽  
Vol 94 ◽  
pp. 223-230
Author(s):  
Yabin Sun ◽  
Jun Fu ◽  
Yudong Wang ◽  
Wei Zhou ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Parameter Extraction ◽  
Small Signal ◽  
Analytical Parameter

A rigorous peeling algorithm for direct parameter extraction procedure of HBT small-signal equivalent circuit

2015 ◽  
Vol 85 (3) ◽  
pp. 405-411 ◽  
Author(s):  
Zhang Jincan ◽  
Liu Bo ◽  
Zhang Leiming ◽  
Sun Ligong ◽  
Wang Jinchan ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Extraction Procedure ◽  
Parameter Extraction ◽  
Small Signal

scholarly journals A Compact and Robust Technique for the Modeling and Parameter Extraction of Carbon Nanotube Field Effect Transistors

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2199
Author(s):  
Laura Falaschetti ◽  
Davide Mencarelli ◽  
Nicola Pelagalli ◽  
Paolo Crippa ◽  
Giorgio Biagetti ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Parameter Extraction ◽  
The Finite Element Method ◽  
Basic Step ◽  
Model Library ◽  
Full Wave ◽  
3D Geometry ◽  
Fitting Parameters

Carbon nanotubes field-effect transistors (CNTFETs) have been recently studied with great interest due to the intriguing properties of the material that, in turn, lead to remarkable properties of the charge transport of the device channel. Downstream of the full-wave simulations, the construction of equivalent device models becomes the basic step for the advanced design of high-performance CNTFET-based nanoelectronics circuits and systems. In this contribution, we introduce a strategy for deriving a compact model for a CNTFET that is based on the full-wave simulation of the 3D geometry by using the finite element method, followed by the derivation of a compact circuit model and extraction of equivalent parameters. We show examples of CNTFET simulations and extract from them the fitting parameters of the model. The aim is to achieve a fully functional description in Verilog-A language and create a model library for the SPICE-like simulator environment, in order to be used by IC designers.

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