Analysis of DC Characteristics and Small Signal Equivalent Circuit Parameters of GaAs Metal–Semiconductor Field Effect Transistors with Different Gate Lengths and Different Gate Contours by Two-Dimensional Device Simulations

2005 ◽  
Vol 44 (9A) ◽  
pp. 6389-6394 ◽  
Author(s):  
C. C. Meng ◽  
J. Y. Su ◽  
S. M. Yang
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Small Signal ◽  
Two Dimensional ◽  
Dc Characteristics ◽  
Equivalent Circuit Parameters

An Improved Cut-Off Frequency Model With a Modified Small-Signal Equivalent Circuit in Graphene Field-Effect Transistors

2015 ◽  
Vol 36 (12) ◽  
pp. 1351-1354 ◽  
Author(s):  
Lingfei Wang ◽  
Ling Li ◽  
Nianduan Lu ◽  
Zhuoyu Ji ◽  
Wei Wang ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Small Signal ◽  
Frequency Model

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

MOF Nanosheet Reconstructed Two‐dimensional Bionic Nanochannel for Protonic Field‐effect Transistors

2021 ◽  
Author(s):  
Guo-Dong Wu ◽  
Hai-Lun Zhou ◽  
Zhi-Hua Fu ◽  
Wen-Hua Li ◽  
Jing-Wei Xiu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional

Optoelectronic Coincidence Detection with Two‐Dimensional Bi 2 O 2 Se Ferroelectric Field‐Effect Transistors

2021 ◽  
pp. 2103982
Author(s):  
Jian‐Min Yan ◽  
Jing‐Shi Ying ◽  
Ming‐Yuan Yan ◽  
Zhao‐Cai Wang ◽  
Shuang‐Shuang Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Coincidence Detection ◽  
Two Dimensional
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