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Severe hump phenomenon induced by increased charge trapping and suppression of electron capture effect in amorphous In-Ga-Zn-O thin-film transistors under unipolar pulsed drain bias with static positive gate bias stress
Solid-State Electronics
◽
10.1016/j.sse.2020.107785
◽
2020
◽
Vol 167
◽
pp. 107785
◽
Cited By ~ 2
Author(s):
Yongjo Kim
◽
Tae-Kyoung Ha
◽
Yong-Jung Cho
◽
Yun-Seong Kang
◽
SangHee Yu
◽
...
Keyword(s):
Thin Film
◽
Electron Capture
◽
Thin Film Transistors
◽
Charge Trapping
◽
Capture Effect
◽
Gate Bias
◽
Bias Stress
◽
Drain Bias
◽
Gate Bias Stress
Download Full-text
Related Documents
Cited By
References
Investigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress
ECS Meeting Abstracts
◽
10.1149/ma2012-01/22/927
◽
2012
◽
Keyword(s):
Thin Film
◽
Thin Film Transistors
◽
Charge Trapping
◽
Gate Bias
◽
Degradation Behavior
◽
Bias Stress
◽
Trapping Effect
◽
Gate Bias Stress
Download Full-text
Investigating Degradation Behavior of InGaZnO Thin-Film Transistors Induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress
ECS Transactions
◽
10.1149/1.3701533
◽
2012
◽
Vol 45
(7)
◽
pp. 133-140
◽
Cited By ~ 3
Author(s):
T.-Y. Hsieh
◽
T.-C. Chang
◽
T.-C. Chen
◽
M.-Y. Tsai
◽
Y.-T. Chen
◽
...
Keyword(s):
Thin Film
◽
Thin Film Transistors
◽
Charge Trapping
◽
Gate Bias
◽
Degradation Behavior
◽
Bias Stress
◽
Trapping Effect
◽
Gate Bias Stress
Download Full-text
WITHDRAWN: Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress
Thin Solid Films
◽
10.1016/j.tsf.2012.09.093
◽
2013
◽
Vol 528
◽
pp. 53-56
◽
Cited By ~ 3
Author(s):
Tien-Yu Hsieh
◽
Ting-Chang Chang
◽
Te-Chih Chen
◽
Ming-Yen Tsai
◽
Yu-Te Chen
Keyword(s):
Thin Film
◽
Thin Film Transistors
◽
Charge Trapping
◽
Gate Bias
◽
Degradation Behavior
◽
Bias Stress
◽
Trapping Effect
◽
Gate Bias Stress
Download Full-text
Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
Applied Physics Letters
◽
10.1063/1.3609873
◽
2011
◽
Vol 99
(2)
◽
pp. 022104
◽
Cited By ~ 114
Author(s):
Te-Chih Chen
◽
Ting-Chang Chang
◽
Tien-Yu Hsieh
◽
Wei-Siang Lu
◽
Fu-Yen Jian
◽
...
Keyword(s):
Thin Film
◽
Thin Film Transistor
◽
Charge Trapping
◽
Gate Bias
◽
Degradation Behavior
◽
Bias Stress
◽
Trapping Effect
◽
Gate Bias Stress
Download Full-text
Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress
Chinese Journal of Liquid Crystals and Displays
◽
10.3788/yjyxs20173202.0091
◽
2017
◽
Vol 32
(2)
◽
pp. 91-96
Author(s):
张猛 ZHANG Meng
◽
夏之荷 XIA Zhi-he
◽
周玮 ZHOU Wei
◽
陈荣盛 CHEN Rong-sheng
◽
王文 WONG Man
◽
...
Keyword(s):
Thin Film
◽
Thin Film Transistors
◽
Polycrystalline Silicon
◽
Degradation Mechanism
◽
Gate Bias
◽
Degradation Behavior
◽
Silicon Thin Film
◽
Bias Stress
◽
Gate Bias Stress
Download Full-text
Analyzing the influence of negative gate bias stress on the transconductance of solution-processed, organic thin-film transistors
Journal of Applied Physics
◽
10.1063/1.4893317
◽
2014
◽
Vol 116
(7)
◽
pp. 074507
◽
Cited By ~ 4
Author(s):
J. Sprogies
◽
S. Scheinert
◽
I. Hörselmann
Keyword(s):
Thin Film
◽
Thin Film Transistors
◽
Organic Thin Film Transistors
◽
Gate Bias
◽
Organic Thin Film
◽
Solution Processed
◽
Bias Stress
◽
Gate Bias Stress
Download Full-text
Positive gate bias stress-induced hump-effect in elevated-metal metal–oxide thin film transistors
Chinese Physics B
◽
10.1088/1674-1056/26/12/128101
◽
2017
◽
Vol 26
(12)
◽
pp. 128101
◽
Cited By ~ 3
Author(s):
Dong-Yu Qi
◽
Dong-Li Zhang
◽
Ming-Xiang Wang
Keyword(s):
Thin Film
◽
Metal Oxide
◽
Thin Film Transistors
◽
Oxide Thin Film
◽
Gate Bias
◽
Bias Stress
◽
Metal Metal
◽
Metal Oxide Thin Film
◽
Gate Bias Stress
Download Full-text
Gate-Bias Stress Stability of P-Type SnO Thin-Film Transistors Fabricated by RF-Sputtering
IEEE Electron Device Letters
◽
10.1109/led.2013.2291896
◽
2014
◽
Vol 35
(1)
◽
pp. 90-92
◽
Cited By ~ 44
Author(s):
I-Chung Chiu
◽
I-Chun Cheng
Keyword(s):
Thin Film
◽
Thin Film Transistors
◽
Rf Sputtering
◽
Gate Bias
◽
Bias Stress
◽
P Type
◽
Gate Bias Stress
Download Full-text
Anomalous degradation behavior of p-type polycrystalline silicon thin film transistors under negative gate bias stress
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
◽
10.1109/ipfa.2013.6599263
◽
2013
◽
Author(s):
Meng Zhang
◽
Wei Zhou
◽
Rongsheng Chen
◽
Man Wong
◽
Hoi-Sing Kwok
Keyword(s):
Thin Film
◽
Thin Film Transistors
◽
Polycrystalline Silicon
◽
Gate Bias
◽
Degradation Behavior
◽
Silicon Thin Film
◽
Bias Stress
◽
P Type
◽
Gate Bias Stress
Download Full-text
Improvement in reliability of amorphous indium–gallium–zinc oxide thin-film transistors with Teflon/SiO2bilayer passivation under gate bias stress
Japanese Journal of Applied Physics
◽
10.7567/jjap.55.02bc17
◽
2016
◽
Vol 55
(2S)
◽
pp. 02BC17
◽
Cited By ~ 4
Author(s):
Ching-Lin Fan
◽
Fan-Ping Tseng
◽
Bo-Jyun Li
◽
Yu-Zuo Lin
◽
Shea-Jue Wang
◽
...
Keyword(s):
Thin Film
◽
Zinc Oxide
◽
Thin Film Transistors
◽
Oxide Thin Film
◽
Indium Gallium Zinc Oxide
◽
Gate Bias
◽
Zinc Oxide Thin Film
◽
Bias Stress
◽
Indium Gallium
◽
Gate Bias Stress
Download Full-text
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