Temperature Optimization for AlGaN/GaN HEMT with the Etched AlGaN Layer Based on 2-D Thermal Model

2021 ◽  
pp. 107982
Author(s):  
Luoyun Yang ◽  
Baoxing Duan ◽  
Yintang Yang
Keyword(s):  
Thermal Model ◽  
Algan Layer ◽  
Gan Hemt ◽  
Temperature Optimization

scholarly journals Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Yanli Liu ◽  
Xifeng Yang ◽  
Dunjun Chen ◽  
Hai Lu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Stress State ◽  
Raman Scattering ◽  
Barrier Layer ◽  
Algan Layer ◽  
Temperature Dependent ◽  
Gan Hemt ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
Resonant Raman ◽  
Resonant Raman Scattering

The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

scholarly journals Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer

2020 ◽  
Vol 8 ◽  
pp. 442-447
Author(s):  
Baoxing Duan ◽  
Luoyun Yang ◽  
Hao Wu ◽  
Yintang Yang
Keyword(s):  
Thermal Field ◽  
Field Analysis ◽  
Algan Layer ◽  
Gan Hemt

THERMAL MODEL FOR THE DESORPTION OF (MOLECULAR) IONS INDUCED BY MeV HEAVY IONS

1989 ◽  
Vol 50 (C2) ◽  
pp. C2-237-C2-243 ◽  
Author(s):  
H. VOIT ◽  
E. NIESCHLER ◽  
B. NEES ◽  
R. SCHMIDT ◽  
CH. SCHOPPMANN ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Thermal Model ◽  
Molecular Ions

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

2011 ◽  
Vol E94-C (7) ◽  
pp. 1193-1198 ◽  
Author(s):  
Akihiro ANDO ◽  
Yoichiro TAKAYAMA ◽  
Tsuyoshi YOSHIDA ◽  
Ryo ISHIKAWA ◽  
Kazuhiko HONJO
Keyword(s):  
Power Amplifier ◽  
Average Power ◽  
Gan Hemt ◽  
Class F
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