First-principles calculations of positron lifetimes of lattice defects induced by hydrogen absorption

2004 ◽  
Vol 172 (1-4) ◽  
pp. 149-153 ◽  
Author(s):  
M MIZUNO
1992 ◽  
Vol 105-110 ◽  
pp. 469-476 ◽  
Author(s):  
P.A. Sterne ◽  
J.H. Kaiser ◽  
J.C. O'Brien ◽  
Richard H. Howell

2005 ◽  
Vol 242-244 ◽  
pp. 1-8 ◽  
Author(s):  
Masataka Mizuno ◽  
Hideki Araki ◽  
Yasuharu Shirai ◽  
Fumiyasu Oba ◽  
Isao Tanaka

The formation of Mg vacancy induced by ultra-dilute trivalent impurities in MgO is investigated by a combination of positron lifetime measurements and first-principles calculations. The undoped MgO yields the shortest positron lifetime of 140 ps that is shorter than that of a single crystal sample. The positron lifetime of the doped samples increases with the increase of the Al dopant concentration and is saturated at around 180 ps. This result clearly indicates that the formation of Mg vacancy is induced by Al dopant. The concentration of the other trivalent impurities can be evaluated using the result of component analysis of positron lifetimes. The experimental bulk lifetime of 130 ps, which is obtained by employing trapping model, is well reproduced by the theoretical calculation using the semiconductor model. The calculated defect lifetime is about 20 ps longer than the experimental value. This may be due to the lattice relaxation around Mg vacancy associated with the trapping of positrons.


1990 ◽  
Vol 209 ◽  
Author(s):  
P.A. Sterne ◽  
J.C. O'Brien ◽  
R.H. Howell ◽  
J.H. Kaisert

ABSTRACTFirst principles calculations of the positron lifetimes are used to interpret experimental lifetime data for Ba1-xKxBiO3. The observed lifetimes are found to be very sensitive to the presence of defects in the sample. The temperature dependence of the lifetime and the change in lifetime with sample aging are both attributed to defects. The qualitative differences between metal vacancy defects and oxygen vacancy defects in metal oxides are also discussed.


2014 ◽  
Vol 52 (12) ◽  
pp. 1025-1029
Author(s):  
Min-Wook Oh ◽  
Tae-Gu Kang ◽  
Byungki Ryu ◽  
Ji Eun Lee ◽  
Sung-Jae Joo ◽  
...  

2019 ◽  
Author(s):  
Michele Pizzocchero ◽  
Matteo Bonfanti ◽  
Rocco Martinazzo

The manuscript addresses the issue of the structural distortions occurring at multiple bonds between high main group elements, focusing on group 14. These distortions are known as trans-bending in silenes, disilenes and higher group analogues, and buckling in 2D materials likes silicene and germanene. A simple but correlated \sigma + \pi model is developed and validated with first-principles calculations, and used to explain the different behaviour of second- and higher- row elements.


2019 ◽  
Author(s):  
Henrik Pedersen ◽  
Björn Alling ◽  
Hans Högberg ◽  
Annop Ektarawong

Thin films of boron nitride (BN), particularly the sp<sup>2</sup>-hybridized polytypes hexagonal BN (h-BN) and rhombohedral BN (r-BN) are interesting for several electronic applications given band gaps in the UV. They are typically deposited close to thermal equilibrium by chemical vapor deposition (CVD) at temperatures and pressures in the regions 1400-1800 K and 1000-10000 Pa, respectively. In this letter, we use van der Waals corrected density functional theory and thermodynamic stability calculations to determine the stability of r-BN and compare it to that of h-BN as well as to cubic BN and wurtzitic BN. We find that r-BN is the stable sp<sup>2</sup>-hybridized phase at CVD conditions, while h-BN is metastable. Thus, our calculations suggest that thin films of h-BN must be deposited far from thermal equilibrium.


Sign in / Sign up

Export Citation Format

Share Document