Solid state devices based on thin films of Cu2O show a new type of I?V relations

2004 ◽  
Vol 175 (1-4) ◽  
pp. 375-378 ◽  
Author(s):  
Z ROSENSTOCK
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Solid State Devices ◽  
New Type

Stresses in Thin Films

1989 ◽  
Vol 33 ◽  
pp. 25-32
Author(s):  
Jerome B. Cohen
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Solid State ◽  
Residual Stresses ◽  
Electronic Devices ◽  
Void Formation ◽  
Stress Gradients ◽  
Solid State Devices ◽  
Subsequent Failure

While any subject associated with films evokes immediate thoughts about solid-state devices, there are other much more mature areas where it is important, such as coatings, and yet work on this entire subject is only in its infancy. Residual stresses are not only important because of their well-known effect on corrosion and mechanical properties, they can also lead to other severe problems. For example, it is now believed that stress gradients can lead to void formation and subsequent failure in metallization in electronic devices. Thus, it is not only the level of stress that can be important, but gradients across a surface of a thin stripe, or through the thickness.

scholarly journals Aryl substitution of pentacenes

2014 ◽  
Vol 10 ◽  
pp. 1692-1705 ◽  
Author(s):  
Andreas R Waterloo ◽  
Anna-Chiara Sale ◽  
Dan Lehnherr ◽  
Frank Hampel ◽  
Rik R Tykwinski
Keyword(s):  
Thin Films ◽  
Cyclic Voltammetry ◽  
Solid State ◽  
Physical Properties ◽  
X Ray ◽  
X Ray Crystallography ◽  
Vis Spectroscopy ◽  
Solid State Devices ◽  
Pentacene Derivatives

A series of 11 new pentacene derivatives has been synthesized, with unsymmetrical substitution based on a trialkylsilylethynyl group at the 6-position and various aryl groups appended to the 13-position. The electronic and physical properties of the new pentacene chromophores have been analyzed by UV–vis spectroscopy (solution and thin films), thermoanalytical methods (DSC and TGA), cyclic voltammetry, as well as X-ray crystallography (for 8 derivatives). X-ray crystallography has been specifically used to study the influence of unsymmetrical substitution on the solid-state packing of the pentacene derivatives. The obtained results add to our ability to better predict substitution patterns that might be helpful for designing new semiconductors for use in solid-state devices.

Electrochromic Behavior of Ionically Self-Assembled Thin Films

2000 ◽  
Vol 660 ◽  
Author(s):  
J.A. Janik ◽  
J.R. Heflin ◽  
D. Marciu ◽  
M.B. Miller ◽  
R.M. Davis
Keyword(s):  
Thin Films ◽  
Absorption Spectrum ◽  
Solid State ◽  
Sulfonic Acid ◽  
Spatial Location ◽  
Self Assembled Monolayers ◽  
Electrochromic Materials ◽  
Solid State Devices ◽  
Assembled Monolayers ◽  
Self Assembled

ABSTRACTIonically self-assembled monolayers (ISAMs), fabricated by alternate adsorption of cationic and anionic components, yield exceptionally homogeneous thin films with sub- nanometer control of the thickness and relative spatial location of the component materials. Using organic electrochromic materials such as polyaniline, we report studies of electrochromic responses in ISAM films. Reversible changes in the absorption spectrum are observed with the application of voltages on the order of 1.0 V. Measurements are made using both liquid electrolytes and in all-solid state devices incorporating solid polyelectrolytes such as poly(2- acylamido 2-methyl propane sulfonic acid) (PAMPS).

scholarly journals Patterned carbon dot-based thin films for solid-state devices

Nanoscale ◽  
2020 ◽  
Vol 12 (18) ◽  
pp. 10254-10264 ◽  
Author(s):  
Apostolos Segkos ◽  
Ilias Sakellis ◽  
Nikolaos Boukos ◽  
Charalampos Drivas ◽  
Stella Kennou ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Fluorescent Properties ◽  
Carbon Dot ◽  
Nanocomposite Thin Films ◽  
Solid State Devices ◽  
Patterned Films

We report a methodology for the deposition and further manipulation of fluorescent CQD-based nanocomposite thin films on SiO2 substrates, to obtain dissolution resistant, lithographically patterned films that retain their fluorescent properties.

Preparation of Thin Cadmium Telluride Samples for Electron Microscope Studies

1974 ◽  
Vol 32 ◽  
pp. 548-549
Author(s):  
T. J. Magee ◽  
J. Peng ◽  
J. Bean
Keyword(s):  
Electron Microscope ◽  
Sulfuric Acid ◽  
Solid State ◽  
Sample Preparation ◽  
Cadmium Telluride ◽  
Potassium Dichromate ◽  
Optical Components ◽  
The Past ◽  
Solid State Devices

Cadmium telluride has become increasingly important in a number of technological applications, particularly in the area of laser-optical components and solid state devices, Microstructural characterizations of the material have in the past been somewhat limited because of the lack of suitable sample preparation and thinning techniques. Utilizing a modified jet thinning apparatus and a potassium dichromate-sulfuric acid thinning solution, a procedure has now been developed for obtaining thin contamination-free samples for TEM examination.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

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