Self-assembled nano-tiles of zinc-blende SiC on Si(100) using organometallic ion beam deposition with simultaneous electron beam irradiation

2005 ◽  
Vol 200 (5-6) ◽  
pp. 1436-1438 ◽  
Author(s):  
T. Matsumoto ◽  
M. Kiuchi ◽  
S. Sugimoto ◽  
S. Goto
2004 ◽  
Vol 85 (9) ◽  
pp. 1595-1597 ◽  
Author(s):  
Jae Kwon Kim ◽  
Kyu Man Cha ◽  
Jung Hyun Kang ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
...  

2005 ◽  
Vol 908 ◽  
Author(s):  
Takashi Matsumoto ◽  
Masato Kiuchi ◽  
Satoshi Sugimoto ◽  
Seiichi Goto

AbstractSelf-assembled silicon carbide (SiC) nano-dots were fabricated on Si wafers by an organometallic ion beam deposition. The self-assembled SiC nano-dots have the shape of a tile, and were heteroepitaxial SiC on Si.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Keiichirou Akiba ◽  
Katsuyuki Tamehiro ◽  
Koki Matsui ◽  
Hayata Ikegami ◽  
Hiroki Minoda

Abstract Green fluorescent protein (GFP) and its variants are an essential tool for visualizing functional units in biomaterials. This is achieved by the fascinating optical properties of them. Here, we report novel optical properties of enhanced GFP (EGFP), which is one of widely used engineered variants of the wild-type GFP. We study the electron-beam-induced luminescence, which is known as cathodoluminescence (CL), using the hybrid light and transmission electron microscope. Surprisingly, even from the same specimen, we observe a completely different dependences of the fluorescence and CL on the electron beam irradiation. Since light emission is normally independent of whether an electron is excited to the upper level by light or by electron beam, this difference is quite peculiar. We conclude that the electron beam irradiation causes the local generation of a new redshifted form of EGFP and CL is preferentially emitted from it. In addition, we also find that the redshifted form is rather robust to electron bombardment. These remarkable properties can be utilized for three-dimensional reconstruction without electron staining in focused ion beam/scanning electron microscopy technology and provide significant potential for simultaneously observing the functional information specified by super-resolution CL imaging and the structural information at the molecular level obtained by electron microscope.


1993 ◽  
Vol 316 ◽  
Author(s):  
D. L. Doering ◽  
K. H. Siek ◽  
P. Xiong-Skiba ◽  
D. L. Carroll

ABSTRACTElectron beam irradiation at energies between 0.5 and 4 keV has been found to produce defects in oxide materials including SiO2, Al2O3 and ZrO2. These defects trap excess charge in the materials and affect their electronic and optical properties. Measurements of the thermally stimulated exoelectron emission following irradiation provides information on relative defect concentrations, defect creation mechanisms, electron trap binding energies, electron emission mechanisms and annealing properties of these materials. Electron emission during sample heating occurs via a variety of mechanisms including the thermionic emission of excess charge from defects at temperatures characteristic of each trap binding energy. By measuring relative trap concentrations as a function of beam parameters, we have identified electron beam energy thresholds for the creation of some types of defects which correlate with core level electronic transitions. Also, electron emission which occurs during defect annealing or diffusion to a surface shows the conditions for the elimination of defects. The ability to control and characterize defect formation and annihilation provides the possibility of engineering specific surface defect conditions. In addition, defect creation by electronic processes is very selective as compared with momentum transfer in ion beam damage of surfaces.


2003 ◽  
Vol 322 (2-3) ◽  
pp. 180-188 ◽  
Author(s):  
S. Utsunomiya ◽  
S. Yudintsev ◽  
L.M. Wang ◽  
R.C. Ewing

2014 ◽  
Vol 15 (2) ◽  
pp. 136-141 ◽  
Author(s):  
Mira Park ◽  
Bishweshwar Pant ◽  
Jawun Choi ◽  
Yong Wan Park ◽  
Chohye Lee ◽  
...  

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