Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

2014 ◽  
Vol 573 ◽  
pp. 140-147 ◽  
Author(s):  
A. Claudel ◽  
V. Fellmann ◽  
I. Gélard ◽  
N. Coudurier ◽  
D. Sauvage ◽  
...  
Keyword(s):  
High Temperature ◽  
Gas Phase ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

2012 ◽  
Vol 526 ◽  
pp. 103-109 ◽  
Author(s):  
M. Balaji ◽  
A. Claudel ◽  
V. Fellmann ◽  
I. Gélard ◽  
E. Blanquet ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor

2014 ◽  
Vol 403 ◽  
pp. 29-31 ◽  
Author(s):  
Troy Baker ◽  
Ashley Mayo ◽  
Zeinab Veisi ◽  
Peng Lu ◽  
Jason Schmitt
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy

1996 ◽  
Vol 449 ◽  
Author(s):  
S. A. Safvi ◽  
N. R. Perkins ◽  
M. N. Horton ◽  
T. F. Kuech
Keyword(s):  
Gas Phase ◽  
Vapor Phase ◽  
Growth Parameters ◽  
Ammonia Concentration ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystal Quality ◽  
Group V ◽  
Group Iii

ABSTRACTThe effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated in a horizontal Gallium Nitride vapor phase epitaxy reactor. To better understand the effects of these parameters, numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and may be responsible for inferior crystal quality. A low ammonia concentration is correlated with the deposition of polycrystalline films. A low V/III ratio and an ammonia concentration lead to poor crystalline quality and increased yellow luminescence. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize these parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.

Effects of the V/III ratio on the quality of aluminum nitride grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

2013 ◽  
Vol 10 (3) ◽  
pp. 362-365 ◽  
Author(s):  
N. Coudurier ◽  
R. Boichot ◽  
V. Fellmann ◽  
A. Claudel ◽  
E. Blanquet ◽  
...  
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

scholarly journals Growth of Boron Nitride on (0001) AlN Templates by High Temperature-Hydride Vapor Phase Epitaxy (HT-HVPE)

2013 ◽  
Vol 46 ◽  
pp. 102-106 ◽  
Author(s):  
Nicolas Coudurier ◽  
Raphaël Boichot ◽  
Fréderic Mercier ◽  
Roman Reboud ◽  
Sabine Lay ◽  
...  
Keyword(s):  
High Temperature ◽  
Boron Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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