Phase formation in cathodic arc synthesized Al–Hf and Al–Hf–O coatings during high temperature annealing in ambient air

CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140–260 °C. The photoconversion efficiencies of the DPPS-treated device remained high even after 255 days in ambient air. Raman scattering spectroscopy and ab initio molecular orbital calculations of DPPS suggested that it increased hole transport efficiency in the treated devices, which was confirmed from the high shunt resistances of the DPPS-treated devices.

Download Full-text

Peculiarities of Phase Formation Processes in Activated Ti + Al Powder Mixture during Transition from Combustion Synthesis to High-temperature Annealing

Combustion Science and Technology ◽

10.1080/00102202.2019.1571053 ◽

2019 ◽

Vol 192 (3) ◽

pp. 457-470

Author(s):

V. Yu Filimonov ◽

M. V. Loginova ◽

S. G. Ivanov ◽

A. A. Sitnikov ◽

V. I. Yakovlev ◽

...

Keyword(s):

High Temperature ◽

Combustion Synthesis ◽

Phase Formation ◽

Powder Mixture ◽

Formation Processes ◽

High Temperature Annealing ◽

Al Powder

Download Full-text

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154998 ◽

1989 ◽

Vol 47 ◽

pp. 604-605

Author(s):

P. Roitman ◽

B. Cordts ◽

S. Visitserngtrakul ◽

S.J. Krause

Keyword(s):

High Temperature ◽

Annealing Temperature ◽

Silicon On Insulator ◽

High Dose ◽

High Temperature Annealing ◽

High Current ◽

Defect Reduction ◽

Annealing Step ◽

Multiple Cycle ◽

Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Download Full-text

Simulation of the Process of Creation of Thin Silicide Films on Silicon under High-temperature Annealing

Journal of Automation and Information Sciences ◽

10.1615/jautomatinfscien.v33.i1.50 ◽

2001 ◽

Vol 33 (1) ◽

pp. 7

Author(s):

Ivan S. Levchenko ◽

Anatoliy A. Sukennyk ◽

Georgiy A. Chechko

Keyword(s):

High Temperature ◽

High Temperature Annealing

Download Full-text

FERROPERM

Alloy Digest ◽

10.31399/asm.ad.fe0099 ◽

1993 ◽

Vol 42 (4) ◽

Keyword(s):

Fracture Toughness ◽

High Temperature ◽

Physical Properties ◽

Saturation Magnetization ◽

Pure Iron ◽

Magnetic Alloy ◽

High Saturation Magnetization ◽

High Temperature Annealing ◽

Soft Magnetic ◽

Soft Magnetic Alloy

Abstract Ferroperm is a soft magnetic alloy that contains 1% aluminum. This addition of aluminum combined with high-temperature annealing increases permeability and reduces coercivity without decreasing the high-saturation magnetization of pure iron. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness. It also includes information on forming. Filing Code: FE-99. Producer or source: NKK Corporation.

Download Full-text