A high-activity nitrogen plasma flow source for deposition of silicon nitride films

2016 ◽  
Vol 294 ◽  
pp. 194-200 ◽  
Author(s):  
D.Q. Shi ◽  
W. Xu ◽  
C.Y. Miao ◽  
C.Y. Ma ◽  
C.S. Ren ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
High Activity ◽  
Plasma Flow ◽  
Nitrogen Plasma ◽  
Silicon Nitride Films

Silicon nitride films grown on silicon below 300 °C in low power nitrogen plasma

1986 ◽  
Vol 49 (2) ◽  
pp. 97-99 ◽  
Author(s):  
E. Paloura ◽  
K. Nauka ◽  
J. Lagowski ◽  
H. C. Gatos
Keyword(s):  
Silicon Nitride ◽  
Low Power ◽  
Nitrogen Plasma ◽  
Silicon Nitride Films

Elastic properties of tensile nitrogen-plasma-treated multilayer silicon nitride films

2014 ◽  
Vol 551 ◽  
pp. 120-126 ◽  
Author(s):  
M. Braccini ◽  
F. Volpi ◽  
A. Devos ◽  
G. Raymond ◽  
D. Benoit ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Elastic Properties ◽  
Nitrogen Plasma ◽  
Silicon Nitride Films

Study of stress in tensile nitrogen-plasma-treated multilayer silicon nitride films

2011 ◽  
Vol 29 (4) ◽  
pp. 041513 ◽  
Author(s):  
Pierre Morin ◽  
Gaetan Raymond ◽  
Daniel Benoit ◽  
Denis Guiheux ◽  
Roland Pantel ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Nitrogen Plasma ◽  
Silicon Nitride Films

Kinetics of the Processes in a Nitrogen Plasma Flow with Carbon Admixture

2020 ◽  
Vol 58 (5) ◽  
pp. 671-680
Author(s):  
O. V. Korshunov ◽  
D. I. Kavyrshin ◽  
V. F. Chinnov
Keyword(s):  
Plasma Flow ◽  
Nitrogen Plasma ◽  
Kinetics Of

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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