Effects of black silicon surface structures on wetting behaviors, single water droplet icing and frosting under natural convection conditions

2016 ◽  
Vol 307 ◽  
pp. 278-286 ◽  
Author(s):  
Xiaofei Yue ◽  
Weidong Liu ◽  
Yuan Wang
Author(s):  
T. W. Lin ◽  
M. C. Wu ◽  
C. H. Peng ◽  
P. L. Chen ◽  
Y. H. Hung

In the present study, an experimental setup with stringent measurement methods for performing the natural convection from a horizontal heated chip mounted with a silicon heat spreader coated with diamond film has been successfully established. The parametric studies on the local and average effective heat transfer characteristics for natural convection from a horizontal smooth silicon wafer, rough silicon wafer or silicon wafer coated with diamond film spreader have been explored. The influencing parameters and conditions include Grashof number and spreader material with different surface treatment conditions. From the results, an axisymmetric bowl-shaped Nu profile is achieved, and the highest heat transfer performance occurs at the location near the rim of the heated surfaces for various heat spreaders. The local Nusselt number for a specified convective heat flux decreases along the distance from the disk rim toward the center. The local or average Nusselt number increases with increasing Grashof number for various heat spreaders. As compared with the average Nusselt number for smooth water surface (Ra=5.69nm), the heat transfer enhancements for rough silicon surface (Ra=516.61nm) and rough diamond surface (Ra=319.51nm) are 10.42% and 7.69%, respectively. Furthermore, new correlations for local and average Nusselt numbers for various heat spreaders are presented, respectively. As compared with the smooth silicon surface, the external thermal resistance for rough silicon surface and rough diamond surface are reduced to 91.18% and 90.73%, respectively; and the maximum thermal resistances for rough silicon wafer and silicon wafer coated with diamond film are reduced to 90.43% and 92.61%, respectively.


Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2214
Author(s):  
Bishal Kafle ◽  
Ahmed Ridoy ◽  
Eleni Miethig ◽  
Laurent Clochard ◽  
Edward Duffy ◽  
...  

In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F2/N2 gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products needing a high volume manufacturing etching platform such as silicon photovoltaics. Specifically, the current study focuses on developing an effective front-side texturing process on Si(100) wafers. Statistical variation of the tool parameters is performed to achieve high etching rates and low surface reflection of the textured silicon surface. It is observed that the rate and anisotropy of the etching process are strongly defined by the interaction effects between process parameters such as substrate temperature, F2 concentration, and process duration. The etching forms features of sub-micron dimensions on c-Si surface. By maintaining the anisotropic nature of etching, weighted surface reflection (Rw) as low as Rw < 2% in Si(100) is achievable. The lowering of Rw is mainly due to the formation of deep, density grade nanostructures, so-called black silicon, with lateral dimensions that are smaller to the major wavelength ranges of interest in silicon photovoltaics.


2010 ◽  
Vol 49 (8) ◽  
pp. 08JD02 ◽  
Author(s):  
Yoshinori Nakakubo ◽  
Asahiko Matsuda ◽  
Masanaga Fukasawa ◽  
Yoshinori Takao ◽  
Tetsuya Tatsumi ◽  
...  

2020 ◽  
Vol 56 (74) ◽  
pp. 10922-10925 ◽  
Author(s):  
Fei Zhu ◽  
Shiliang Tan ◽  
Manivannan Kalavathi Dhinakaran ◽  
Jing Cheng ◽  
Haibing Li

Asymmetric UV light irradiation can drive the macroscopic directional motion of water droplet on an azobenzene-calix[4]arene (ABC4) modified silicon surface.


2003 ◽  
Vol 2003.16 (0) ◽  
pp. 175-176
Author(s):  
Xian WANG ◽  
Toshio TAGAWA ◽  
Hiroyuki OZOE ◽  
Hiroyuki HIRANO ◽  
Qiuwang WANG

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