On the origin of multilayered structure of W-B-C coatings prepared by non-reactive magnetron sputtering from a single segmented target

2019 ◽  
Vol 377 ◽  
pp. 124864 ◽  
Author(s):  
Michael Kroker ◽  
Zsolt Czigány ◽  
Zdeněk Weiss ◽  
Matej Fekete ◽  
Pavel Souček ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Multilayered Structure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Segmented Target

Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Turan ◽  
Q. Wahab ◽  
L. Hultman ◽  
M. Willander ◽  
J. -E. Sundgren
Keyword(s):  
Magnetron Sputtering ◽  
Interface State ◽  
State Density ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Mos Structure ◽  
Transmission Electron ◽  
Wide Bandgap Materials

ABSTRACTWe report the fabrication and the characterization of Metal Oxide Semiconductor (MOS) structure fabricated on thermally oxidized 3C-SiC grown by reactive magnetron sputtering. The structure and the composition of the SiO2 layer was studied by cross-sectional transmission electron microscopy (XTEM) Auger electron spectroscopy (AES). Homogeneous stoichiometric SiO2 layers formed with a well-defined interface to the faceted SiC(lll) top surface. Electrical properties of the MOS capacitor have been analyzed by employing the capacitance and conductance techniques. C-V curves shows the accumulation, depletion and deep depletion phases. The capacitance in the inversion regime is not saturated, as usually observed for wide-bandgap materials. The unintentional doping concentration determined from the 1/C2 curve was found to be as low as 2.8 × 1015 cm-3. The density of positive charges in the grown oxide and the interface states have been extracted by using high-frequency C-V and conductance techniques. The interface state density has been found to be in the order of 1011cm2-eV-1.

Microstructures and properties of novel nanocomposite WNx coatings deposited by reactive magnetron sputtering

2020 ◽  
Vol 512 ◽  
pp. 145508 ◽  
Author(s):  
Yang Deng ◽  
Shiheng Yin ◽  
Yue Hong ◽  
Yi Wang ◽  
Yi Hu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron
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