Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering.

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Turan ◽  
Q. Wahab ◽  
L. Hultman ◽  
M. Willander ◽  
J. -E. Sundgren
Keyword(s):  
Magnetron Sputtering ◽  
Interface State ◽  
State Density ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Mos Structure ◽  
Transmission Electron ◽  
Wide Bandgap Materials

ABSTRACTWe report the fabrication and the characterization of Metal Oxide Semiconductor (MOS) structure fabricated on thermally oxidized 3C-SiC grown by reactive magnetron sputtering. The structure and the composition of the SiO2 layer was studied by cross-sectional transmission electron microscopy (XTEM) Auger electron spectroscopy (AES). Homogeneous stoichiometric SiO2 layers formed with a well-defined interface to the faceted SiC(lll) top surface. Electrical properties of the MOS capacitor have been analyzed by employing the capacitance and conductance techniques. C-V curves shows the accumulation, depletion and deep depletion phases. The capacitance in the inversion regime is not saturated, as usually observed for wide-bandgap materials. The unintentional doping concentration determined from the 1/C2 curve was found to be as low as 2.8 × 1015 cm-3. The density of positive charges in the grown oxide and the interface states have been extracted by using high-frequency C-V and conductance techniques. The interface state density has been found to be in the order of 1011cm2-eV-1.

Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering

1996 ◽  
Vol 11 (10) ◽  
pp. 2458-2462 ◽  
Author(s):  
L. Hultman ◽  
H. Ljungcrantz ◽  
C. Hallin ◽  
E. Janzén ◽  
J-E. Sundgren ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Specific Contact Resistance ◽  
Room Temperature Resistivity ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Tin Films ◽  
Transmission Electron ◽  
Specific Contact ◽  
Tin Thin Films

Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700 °C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001)‖3C-SiC(001), and TiN[110]‖3C-SiC[110], and TiN(111)‖6H-SiC(0001) and . In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 3 10−3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm−3.

3C–SiC/Si/3C–SiC epitaxial trilayer films deposited on Si(111) substrates by reactive magnetron sputtering

1995 ◽  
Vol 10 (6) ◽  
pp. 1349-1351 ◽  
Author(s):  
Q. Wahab ◽  
L. Hultman ◽  
I.P. Ivanov ◽  
M. Willander ◽  
J-E. Sundgren
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Stacking Faults ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Cross Sectional ◽  
Epitaxial Structure ◽  
Transmission Electron

A trilayer epitaxial structure of 3C-SiC/Si/3C-SiC was grown on Si(111) substrate by reactive magnetron sputtering. The layered structure consisted of a 300 nm thick Si layer sandwiched between two 250 nm thick 3C-SiC layers. Cross-sectional transmission electron microscopy (XTEM) showed that all layers were epitaxial to each other. The 3C-SiC layers contained stacking faults and double positioning domains with a high density in the second SiC layer. The Si layer showed the lowest density of planar faults, but developed growth facets. Observation was made of stacking faults propagating from 3C-SiC to Si layer as well as stacking faults originating at the termination of 3C-SiC double positioning boundaries into Si. The termination of Si stacking faults during growth of SiC is also reported.

scholarly journals The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

Materials ◽  
2018 ◽  
Vol 11 (7) ◽  
pp. 1253 ◽  
Author(s):  
Weifeng Zheng ◽  
Yue Chen ◽  
Xihong Peng ◽  
Kehua Zhong ◽  
Yingbin Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Copper Oxide ◽  
Contact Potential Difference ◽  
Phase Evolution ◽  
Reactive Magnetron Sputtering ◽  
Oxide Semiconductor ◽  
Reactive Magnetron ◽  
Raman Spectrometry ◽  
Contact Potential

P-type binary copper oxide semiconductor films for various O2 flow rates and total pressures (Pt) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu2O, Cu4O3, CuO, and their mixture was established. Moreover, based on Kelvin Probe Force Microscopy (KPFM) and conductive AFM (C-AFM), by measuring the contact potential difference (VCPD) and the field emission property, the work function and the carrier concentration were obtained, which can be used to distinguish the different types of copper oxide states. The band gaps of the Cu2O, Cu4O3, and CuO thin films were observed to be (2.51 ± 0.02) eV, (1.65 ± 0.1) eV, and (1.42 ± 0.01) eV, respectively. The resistivities of Cu2O, Cu4O3, and CuO thin films are (3.7 ± 0.3) × 103 Ω·cm, (1.1 ± 0.3) × 103 Ω·cm, and (1.6 ± 6) × 101 Ω·cm, respectively. All the measured results above are consistent.

Substrate Surface Dependence of the Microstructure of μc-Si,Ge:H Deposited by Reactive Magnetron Sputtering (RMS)

1995 ◽  
Vol 405 ◽  
Author(s):  
S. M. Cho ◽  
K. Christensen ◽  
D. Wolfe ◽  
H. Ying ◽  
D. R. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Substrate Surface ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Film Microstructure ◽  
Substrate Surfaces

AbstractWe have investigated on the effect of different substrate surfaces in changing the microstructure of μc-SixGe1-x:H films prepared by reactive magnetron sputtering. Films were deposited on hydrogen terminated Si(111), Si(100) surfaces, and surfaces chemical and plasma oxides. The thin film microstructure was characterized by Fourier transform infrared spectroscopy (FTIR), high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and Raman scattering.

High Substrate Temperature a-Si:H Grown by DC Reactive Magnetron Sputtering

1993 ◽  
Vol 297 ◽  
Author(s):  
Y. H. Liang ◽  
N. Maley ◽  
J. R. Abelson
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Light Exposure ◽  
State Density ◽  
High Substrate Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
High Substrate ◽  
Partial Pressures ◽  
Dc Reactive Magnetron Sputtering

We report the electronic properties, stability and microstructure of a-Si:H films grown at very high substrate temperature (Ts = 320∼425°C) by DC reactive magnetron sputtering (RMS). The partial pressures of Ar and H2 are fixed at 1.5 and 0.8 mT, respectively, during the deposition. The initial defect state density, determined by the constant photocurrent method (CPM), varies from 2∼5×l015 cm−3with H content changing from 15–10 at.% as Ts increases from 320–375°C. For 100 hrs white light exposure at lW/cm2, a heavily degraded state was obtained with mid–gap state density in the range 2-3×l016cm−3 over this Ts range. These are among the lowest values reported for intrinsic a–Si:H.

Deposition of Microcrystalline Si,Ge (µc-Si,Ge) Alloys by Reactive Magnetron Sputtering

1994 ◽  
Vol 358 ◽  
Author(s):  
S.M. Cho ◽  
D. Wolfe ◽  
S.S. He ◽  
K. Christensen ◽  
D.M. Maher ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Microstructural Characterization ◽  
High Energy ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Film Properties ◽  
Transmission Electron ◽  
Partial Pressures

ABSTRACTSixGei1−x:H alloys which span the transition from amorphous to microcrystalline structures have been prepared by reactive magnetron sputtering (RMS) from pure crystalline Si and Ge targets in different partial pressures of hydrogen, using argon as the sputtering gas. Film properties were studied as a function of H2 flow and partial pressure. X-ray diffraction (XRD), Raman scattering, Fourier transform infrared spectroscopy (FTIR), reflection high-energy electron diffraction (RHEED), and high resolution transmission electron microscopy (HRTEM) have been used for microstructural characterization. Films prepared by RMS at a partial pressure of hydrogen (PH2) < ∼ 4 mTorr were amorphous, while those prepared with PH2 > ∼ 6 mTorr were microcrystalline.

Growth and Characterization of Well-Aligned RuO2/R-TiO2 Heteronanostructures on Sapphire (100) Substrates by Reactive Magnetron Sputtering

2011 ◽  
Vol 170 ◽  
pp. 78-82
Author(s):  
Hung Pin Hsu ◽  
Ying Sheng Huang ◽  
Chien Nan Yeh ◽  
Yi Min Chen ◽  
Dah Shyang Tsai ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Vertically Aligned ◽  
Xrd Patterns ◽  
Electron Diffractometry

We report the growth of well-aligned RuO2/R-TiO2 heteronanostructures on sapphire (100) substrates by reactive magnetron sputtering using Ti and Ru metal targets under different conditions. The surface morphology and structural properties of the as-deposited heteronanostructures were characterized using field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected-area electron diffractometry (SAED). The FESEM micrographs and XRD patterns indicated the growth of vertically aligned RuO2(001) nanotubes and twinned V-shaped RuO2(101) nanowedges (NWs) on top of R-TiO2 nanorods under different sputtering pressures. TEM and SAED characterizations of the V-shaped RuO2 NWs showed that the NWs are crystalline RuO2 with twin planes of (101) and twin direction of [ 01] at the V-junction.

scholarly journals A look underneath the SiO2/4H-SiC interface after N2O thermal treatments

2013 ◽  
Vol 4 ◽  
pp. 249-254 ◽  
Author(s):  
Patrick Fiorenza ◽  
Filippo Giannazzo ◽  
Lukas K Swanson ◽  
Alessia Frazzetto ◽  
Simona Lorenti ◽  
...  
Keyword(s):  
Surface Region ◽  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Thermal Treatments ◽  
Cross Sectional ◽  
Active Nitrogen ◽  
Mos Devices ◽  
Surface Configuration ◽  
P Type

The electrical compensation effect of the nitrogen incorporation at the SiO2/4H-SiC (p-type) interface after thermal treatments in ambient N2O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-SiC areas selectively exposed to N2O at 1150 °C showed an increased resistance compared to the unexposed ones; this indicates the incorporation of electrically active nitrogen-related donors, which compensate the p-type doping in the SiC surface region. Cross-sectional SCM measurements on SiO2/4H-SiC metal/oxide/semiconductor (MOS) devices highlighted different active carrier concentration profiles in the first 10 nm underneath the insulator–substrate interface depending on the SiO2/4H-SiC roughness. The electrically active incorporated nitrogen produces both a compensation of the acceptors in the substrate and a reduction of the interface state density (D it). This result can be correlated with the 4H-SiC surface configuration. In particular, lower D it values were obtained for a SiO2/SiC interface on faceted SiC than on planar SiC. These effects were explained in terms of the different surface configuration in faceted SiC that enables the simultaneous exposition at the interface of atomic planes with different orientations.

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