Comparative investigation of single-layer and multilayer Nb-doped TiC coatings deposited by pulsed vacuum deposition techniques

2020 ◽  
Vol 385 ◽  
pp. 125422 ◽  
Author(s):  
K.A. Kuptsov ◽  
A.N. Sheveyko ◽  
O.S. Manakova ◽  
D.A. Sidorenko ◽  
D.V. Shtansky
2019 ◽  
Vol 799 ◽  
pp. 185-190 ◽  
Author(s):  
Natalja Sleptsuk ◽  
Alexander A. Lebedev ◽  
Ilya Eliseyev ◽  
Oleg Korolkov ◽  
Jana Toompuu ◽  
...  

Graphene has been employed as electrode materials in various electrochemical biosensors due to its excellent electrical, mechanical, thermal and optical properties. In the present study, Chemical Vapor Deposited (CVD) and epitaxial graphene on SiC were examined as material for electrochemical biosensing application. The surface of both types of graphene were characterized using Raman spectroscopy as well as with Scanning Electron Microscopy (SEM). As the key point for the comparison, the impedance spectroscopy measurements of different graphene films using deionized water and saline 0.9% NaCl solution were performed as well. The method of impedance measurements applied to graphene films expands the range of possibilities for using this material as sensitive biosensors. Based on the comparative tests results, it is possible to draw the first simple conclusions about the advantages of CVD or epitaxial graphene. Based on the results of impedance spectroscopy, it is possible to draw a simple conclusion – single layer graphene has the higher sensitivity.


1991 ◽  
Vol 231 ◽  
Author(s):  
S. Elagoz ◽  
W. Vavra ◽  
C. Uher ◽  
Roy Clarke

AbstractWe demonstrate the growth of epitaxially ordered Cobalt-Chromium (Co-Cr) superlattices by ultrahigh-vacuum deposition techniques. The superlattices, consisting of hcp Co (00.1) and hcp Cr (00.1) layers with their [11.0] crystallographic axes parallel to GaAs [110] have a hexagonal closed packed (hcp) structure with the c-axis normal to the film plane.


Author(s):  
А. Папикян ◽  
С. Арутюнян ◽  
Н. Агамалян ◽  
Р. Овсепян ◽  
А. Хачатурова ◽  
...  

Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The currentvoltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance.


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