Temperature dependent charge transport in poly(3-hexylthiophene)-block polystyrene copolymer field-effect transistor

2012 ◽  
Vol 162 (17-18) ◽  
pp. 1531-1536 ◽  
Author(s):  
M. Arif ◽  
Jianhua Liu ◽  
Lei Zhai ◽  
Saiful I. Khondaker
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Temperature Dependent ◽  
Effect Transistor

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

scholarly journals Investigation of charge transport properties of [1]Benzothieno[3,2-b][1]-benzothiophene single-crystals in field-effect transistor configuration

2020 ◽  
Vol 78 ◽  
pp. 105605 ◽  
Author(s):  
Xiao Liu ◽  
Xiaolu Su ◽  
Clément Livache ◽  
Lise-Marie Chamoreau ◽  
Sébastien Sanaur ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Single Crystals ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

On the temperature-dependent characteristics of a Pd/InAlAs based electroless-plating gate metamorphic heterostructure field-effect transistor (MHFET)

2013 ◽  
Vol 79 ◽  
pp. 50-55 ◽  
Author(s):  
Chien-Chang Huang ◽  
Huey-Ing Chen ◽  
Tai-You Chen ◽  
Chi-Shiang Hsu ◽  
Chun-Chia Chen ◽  
...  
Keyword(s):  
Electroless Plating ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Temperature Dependent ◽  
Effect Transistor

Effect of thiophene/furan substitution on organic field effect transistor properties of arylthiadiazole based organic semiconductors

2020 ◽  
Vol 8 (48) ◽  
pp. 17297-17306
Author(s):  
Anna Pachariyangkun ◽  
Masayuki Suda ◽  
Sarinya Hadsadee ◽  
Siriporn Jungsuttiwong ◽  
Phattananawee Nalaoh ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Channel Layer ◽  
Effect Transistor

This study determines that furan could display comparable charge transport properties to its thiophene analogue. The OFET device employing furan-substituted benzothiadiazole as the channel layer showed a mobility (μmax) of 0.0122 cm2 V−1 s−1.

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