scholarly journals Oxygen diffusion hardened zirconium alloy ZrNb7 – Tribological properties derived from Calo wear and wheel on flat experiments

2022 ◽  
Vol 165 ◽  
pp. 107304
Author(s):  
Mike Mosbacher ◽  
Marius Hilzenthaler ◽  
Mathias Galetz ◽  
Uwe Glatzel
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.


2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.


2018 ◽  
Vol 91 (9) ◽  
pp. 358-361
Author(s):  
Takuya OHZONO ◽  
Kay TERAOKA

2020 ◽  
Vol 86 (8) ◽  
pp. 32-37
Author(s):  
V. V. Larionov ◽  
Xu Shupeng ◽  
V. N. Kudiyarov

Nickel films formed on the surface of zirconium alloys are often used to protect materials against hydrogen penetration. Hydrogen adsorption on nickel is faster since the latter actively interacts with hydrogen, oxidizes and forms a protective film. The goal of the study is to develop a method providing control of hydrogen absorption by nickel films during vacuum-magnetron sputtering and hydrogenation via measuring thermoEMF. Zirconium alloy E110 was saturated from the gas phase with hydrogen at a temperature of 350°C and a pressure of 2 atm. A specialized Rainbow Spectrum unit was used for coating. It is shown that a nickel film present on the surface significantly affects the hydrogen penetration into the alloy. A coating with a thickness of more than 2 μm deposited by magnetron sputtering on the surface of a zirconium alloy with 1% Nb, almost completely protects the alloy against hydrogen penetration. The magnitude of thermoemf depends on the hydrogen concentration in the zirconium alloy and film thickness. An analysis of the hysteresis width of the thermoEMF temperature loop and a method for determining the effective activation energy of the conductivity of a hydrogenated material coated with a nickel film are presented. The results of the study can be used in assessing the hydrogen concentration and, hence, corrosion protection of the material.


2018 ◽  
Vol 0 (2) ◽  
pp. 38-45
Author(s):  
Yu. V. Panichkin ◽  
V. P. Zakharova ◽  
Yu. L. Konopliova ◽  
A. Yu. Gavrilishin ◽  
E. V. Beshlyaga ◽  
...  

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