Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

2005 ◽  
Vol 487 (1-2) ◽  
pp. 252-254 ◽  
Author(s):  
Nobuyuki Andoh ◽  
Toshiyuki Sameshima ◽  
Yasunori Andoh
Keyword(s):  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

scholarly journals The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture

2005 ◽  
Vol 54 (8) ◽  
pp. 3805
Author(s):  
Zhu Zu-Song ◽  
Lin Xuan-Ying ◽  
Yu Yun-Peng ◽  
Lin Kui-Xun ◽  
Qiu Gui-Ming ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Light Stability ◽  
Polycrystalline Silicon Films

scholarly journals Raman analysis of microstructure of polycrystalline silicon films deposited at low-temperatures from SiCl4-H2

2004 ◽  
Vol 53 (5) ◽  
pp. 1558
Author(s):  
Lin Xuan-Ying ◽  
Huang Chuang-Jun ◽  
Lin Kui-Xun ◽  
Yu Yun-Peng ◽  
Yu Chu-Ying ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Raman Analysis ◽  
Polycrystalline Silicon Films

Redistribution of Ion Implanted Hydrogen in Polycrystalline Silicon Thin Films

1985 ◽  
Vol 59 ◽  
Author(s):  
Ronald N. Legge ◽  
James F. Brown
Keyword(s):  
Thin Films ◽  
Hall Mobility ◽  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Spreading Resistance ◽  
Silicon Thin Films ◽  
Polycrystalline Silicon Films ◽  
Diffusion Of Hydrogen ◽  
Ion Implanted

ABSTRACTThe effect of implanted hydrogen on the resistivity of polycrystalline silicon films has been investigated. The observed reduction in resistivity due to hydrogen is most pronounced for lightly doped films, and is accentuated by a 450°C anneal. An increase in Hall mobility is also observed. The pre-implant resistivity is completely recovered by annealling at 600°C. Diffusion of hydrogen at low temperatures is monitored by local resistivity changes detected with spreading resistance measurements.

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Structure of Annealed Polycrystalline Silicon Films. I. Recrystallization

1986 ◽  
Vol 98 (2) ◽  
pp. 383-390 ◽  
Author(s):  
F. L. Edelman ◽  
J. Heydenreich ◽  
D. Hoehl ◽  
J. Matthäi ◽  
I. Melnik ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films
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