Hardness and elastic modulus of Au/NiCr/Ta multilayers on Al2O3 substrate by nanoindentation continuous stiffness measurement technique

2005 ◽  
Vol 485 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Wu Tang ◽  
Lu Shen ◽  
Kewei Xu
Keyword(s):  
Elastic Modulus ◽  
Measurement Technique ◽  
Al2o3 Substrate ◽  
Stiffness Measurement ◽  
Continuous Stiffness Measurement

Composite Middle Lamella Hardness and Young’s Modulus of Artificial Dried Spruce Wood by Nanoindentation

2016 ◽  
Vol 827 ◽  
pp. 320-323
Author(s):  
Zdeněk Prošek ◽  
Jaroslav Topič ◽  
Pavel Tesárek ◽  
Václav Nežerka ◽  
Vlastimil Králik
Keyword(s):  
Mechanical Properties ◽  
Young’S Modulus ◽  
Measurement Technique ◽  
Middle Lamella ◽  
Indentation Modulus ◽  
Drying Process ◽  
Stiffness Measurement ◽  
Micromechanical Properties ◽  
Spruce Wood ◽  
Continuous Stiffness Measurement

The presented article deals with the influence of the drying process on the micro-mechanical properties of the composite middle lamella. The purpose of the composite middle lamella is to connecti individual cells. Micromechanical properties were obtained using nanoindentation and directly continuous stiffness measurement technique. Indentation modulus of tested samples was 11.45 GPa for natural dried wood and 12.51 GPa for artificial dried wood.

On the measurement of energy dissipation using nanoindentation and the continuous stiffness measurement technique

2013 ◽  
Vol 28 (21) ◽  
pp. 3029-3042 ◽  
Author(s):  
Erik G. Herbert ◽  
Kurt E. Johanns ◽  
Robert S. Singleton ◽  
George M. Pharr
Keyword(s):  
Energy Dissipation ◽  
Measurement Technique ◽  
Stiffness Measurement ◽  
Continuous Stiffness Measurement ◽  
Image Position

Abstract

scholarly journals Relationship of Stiffness-Based Indentation Properties Using Continuous-Stiffness-Measurement Method

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 97 ◽  
Author(s):  
Wai Yeong Huen ◽  
Hyuk Lee ◽  
Vanissorn Vimonsatit ◽  
Priyan Mendis
Keyword(s):  
Elastic Modulus ◽  
Measurement Method ◽  
Computational Simulation ◽  
Accurate Solution ◽  
New Approach ◽  
Stiffness Measurement ◽  
Pile Up ◽  
Continuous Stiffness Measurement ◽  
Relationship Of

The determination of elastic modulus (E) and hardness (H) relies on the accuracy of the contact area under the indenter tip, but this parameter cannot be explicitly measured during the nanoindentation process. This work presents a new approach that can derive the elastic modulus (E) and contact depth (hc) based on measured experiment stiffness using the continuous-stiffness-measurement (CSM) method. To achieve this, an inverse algorithm is proposed by incorporating a set of stiffness-based relationship functions that are derived from combining the dimensional analysis approach and computational simulation. This proposed solution considers both the sink-in and pile-up contact profiles; therefore, it provides a more accurate solution when compared to a conventional method that only considers the sink-in contact profile. While the proposed solution is sensitive to Poisson’s ratio (ν) and the equivalent indentation conical angle (θ), it is not affected by material plasticity, including yield strength (σy) and work hardening (n) for the investigated range of 0.001 < σy/E < 0.5. The proposed stiffness-based approach can be used to consistently derive elastic modulus and hardness by using stiffness and the load-and-unload curve measured by the continuous-stiffness-measurement (CSM) method.

Hardness and Elastic Modulus Measurements of AIN and TiN Sub-Micron Thin Films Using the Continuous Stiffness Measurement Technique with Fem Analysis

1999 ◽  
Vol 594 ◽  
Author(s):  
T. A. Rawdanowicz ◽  
J. Sankar ◽  
J. Narayan ◽  
V. Godbole
Keyword(s):  
Thin Films ◽  
Elastic Modulus ◽  
Elastic Moduli ◽  
Pulsed Laser ◽  
Fem Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stiffness Measurement ◽  
Tin Thin Films ◽  
Continuous Stiffness Measurement

AbstractThe hardnesses and elastic moduli of aluminum nitride (AIN) and titanium nitride (TiN) sub-micron thin films pulsed laser deposited (PLD) on silicon (111) were measured using nanoindentation based on a continuous stiffness measurement (CSM) technique. Thin film thicknesses, based on profile measurements of simultaneously grown step samples, are 210 nm and 180 nm with surface roughnesses of 12 nm and 2 nm for AlN and TiN, respectively. X-ray diffraction showed AlN as a highly textured polycrystalline AlN wurzite structure with a (0001) orientation and TiN as a cubic structure with a (111) orientation. The CSM technique provided hardness and elastic modulus as a function of depth. Finite element modeling (FEM) aided in determining the optimum indenter contact depth at which the thin films behaved as a semi-infinite solid with negligible substrate induced artifacts. Hardnesses of these AlN and TiN thin films were, determined analytically, 25 GPa and 33 GPa, as compared to FEM results of 24 GPa and 30 GPa, respectively. The elastic moduli measured 320 GPa and 370 GPa for these AlN and TiN thin films, respectively.

Characterization of Surface Layer of Silicon Wafer by Using Nano Indenter

2007 ◽  
Author(s):  
Yu-Li Sun ◽  
Dun-Wen Zuo ◽  
Yong-Wei Zhu ◽  
Feng Xu ◽  
Min Wang
Keyword(s):  
Elastic Modulus ◽  
Silicon Wafer ◽  
Bulk Material ◽  
Contact Stiffness ◽  
Indentation Test ◽  
Oxide Coating ◽  
Stiffness Measurement ◽  
Contact Depth ◽  
Continuous Stiffness Measurement

Mechanical properties of the silicon wafer are evaluated by a nano indenter system with the continuous stiffness measurement (CSM) technique. Contact stiffness, hardness and elastic modulus of the silicon wafer are continuously measured during the loading in an indentation test. The results show that when the contact depth is between 20 and 32 nm, its contact stiffness is linear with the contact depth, and its hardness and elastic modulus keep constant at 10.2 GPa and 140.3 GPa respectively, which belong to the oxide coating of the silicon wafer. When the contact depth is between 32 and 60 nm, its contact stiffness is not linear with the contact depth, and the hardness and elastic modulus increase rapidly with the contact depth, because they are affected by the bulk material. When the contact depth is over 60 nm, the contact stiffness of the silicon wafer is linear with the contact depth again, and the hardness and elastic modulus keep constant at 12.5 GPa and 165.6 GPa respectively, which belong to the silicon wafer, the bulk material.

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