Electrical properties of low temperature deposited amorphous barium titanate thin films as dielectrics for integrated capacitors

2006 ◽  
Vol 504 (1-2) ◽  
pp. 201-204 ◽  
Author(s):  
F. El Kamel ◽  
P. Gonon ◽  
F. Jomni
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Barium Titanate ◽  
Low Temperature

Low-temperature deposition of (110)-oriented barium titanate thin films and their electrical properties

1999 ◽  
Vol 24 (1-4) ◽  
pp. 75-84
Author(s):  
Thomas A. Rabson ◽  
Jiun-Ting Lee ◽  
Qingxin Su ◽  
Marc A. Robert
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Barium Titanate ◽  
Low Temperature ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Electrical properties of AlN thin films deposited at low temperature on Si(100)

1999 ◽  
Vol 346 (1-2) ◽  
pp. 174-180 ◽  
Author(s):  
C.L. Aardahl ◽  
J.W. Rogers ◽  
H.K. Yun ◽  
Y. Ono ◽  
D.J. Tweet ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature

Low-Temperature Processing Using Triple Alkoxide Precursors for Layer-Structured Perovskite Thin Films: Preparation and Characterization of Mbi2Ta2O9 (M: Ca or Ba) Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
K. Kato
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Surface Topography ◽  
Annealing Temperature ◽  
Low Temperature Processing ◽  
Deposited Films ◽  
Alkoxide Precursors

AbstractCaBi2Ta2O9 and BaBi2Ta2O9 thin films were successfully prepared by using triple alkoxide precursors such as Ca[BiTa(OC2H5)9]2 and Ba[BiTa(OC2H5)9]2, respectively. As-deposited films were amorphous and crystallized below 500°C by rapid thermal annealing in oxygen. The crystallinity improved with annealing temperature. The development of the crystal structure and surface topography of the thin films were investigated. Additionally, some electrical properties were evaluated.

scholarly journals Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times

AIP Advances ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 115126
Author(s):  
Taehyeon Kim ◽  
Changyong Oh ◽  
So Hee Park ◽  
Joo Won Lee ◽  
Sang Ik Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices

2011 ◽  
Vol 239-242 ◽  
pp. 2628-2631 ◽  
Author(s):  
Ming Chang Kuan ◽  
Kai Huang Chen ◽  
Wen Cheng Tzou ◽  
Chien Min Cheng ◽  
Yi Jun Lin
Keyword(s):  
Thin Films ◽  
Carbon Dioxide ◽  
Electrical Properties ◽  
Low Temperature ◽  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Ferroelectric Thin Films ◽  
Access Memory ◽  
Temperature Method

In this study, the electrical properties of as-deposited Sr0.4Ba0.6Nb2O6(SBN) ferroelectric thin films on SiO2/Si(100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited SBN ferroelectric thin films were treated by SCF process which mixed with pure H2O and propyl alcohol. After SCF process treatment, the memory windows increased in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were obtained. In addition, the improvement properties of as-deposited SBN thin films after SCF process treatment were found by XPS, C-V, and J-E measurement. Finally, the mechanism concerning the dependence of electrical properties of the SBN ferroelectric thin films on the SCF process was discussed.

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