Low-temperature high-performance In-Ga-Sn-O thin-film transistors with Al2O3 grown by a facile dual-atomic layer deposition

2021 ◽  
pp. 160053
Author(s):  
Hyunjae Jang ◽  
Changyong Oh ◽  
Tae Hyun Kim ◽  
Hyeong Wook Kim ◽  
Sang Ik Lee ◽  
...  
2021 ◽  
Vol 52 (S2) ◽  
pp. 472-476
Author(s):  
Qi Li ◽  
Huijin Li ◽  
Junchen Dong ◽  
Jingyi Wang ◽  
Dedong Han ◽  
...  

2019 ◽  
Vol 11 (16) ◽  
pp. 14892-14901 ◽  
Author(s):  
In-Hwan Baek ◽  
Jung Joon Pyeon ◽  
Seong Ho Han ◽  
Ga-Yeon Lee ◽  
Byung Joon Choi ◽  
...  

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BF04 ◽  
Author(s):  
Yumi Kawamura ◽  
Mai Tani ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Masahiro Horita ◽  
...  

2017 ◽  
Vol 5 (12) ◽  
pp. 3139-3145 ◽  
Author(s):  
Soo Hyun Kim ◽  
In-Hwan Baek ◽  
Da Hye Kim ◽  
Jung Joon Pyeon ◽  
Taek-Mo Chung ◽  
...  

Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD).


Sign in / Sign up

Export Citation Format

Share Document