Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition

2010 ◽  
Vol 518 (18) ◽  
pp. 5169-5172 ◽  
Author(s):  
Taeyoon Lee ◽  
H. Seo ◽  
H. Hwang ◽  
B. Howe ◽  
S. Kodambaka ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Irradiation ◽  
Sputter Deposition ◽  
Low Energy ◽  
High Flux ◽  
Reactive Magnetron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Low Temperature Epitaxy

Ion-assisted low-temperature (≤ 150 °C) epitaxial growth of TiN on Cu by reactive magnetron sputter deposition

1996 ◽  
Vol 287 (1-2) ◽  
pp. 87-92 ◽  
Author(s):  
H. Ljungcrantz ◽  
S. Benhenda ◽  
G. Håkansson ◽  
I. Ivanov ◽  
L. Hultman ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Sputter Deposition ◽  
Reactive Magnetron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

1993 ◽  
Vol 8 (10) ◽  
pp. 2613-2616 ◽  
Author(s):  
Jennifer Ross ◽  
Mike Rubin ◽  
T.K. Gustafson
Keyword(s):  
Single Crystal ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Reactive Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Aln Buffer

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550 and 620 °C. However, using a high temperature 200 Å AlN buffer layer epitaxial GaN is produced. Crystal structure and quality are measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.

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