The characteristics of fluorinated polycrystalline silicon oxides and thin film transistors by CF4 plasma treatment

2010 ◽  
Vol 519 (2) ◽  
pp. 919-922 ◽  
Author(s):  
Chyuan Haur Kao ◽  
C.S. Lai ◽  
W.H. Sung ◽  
C.H. Lee
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Oxides

scholarly journals A Review of the Progress of Thin-Film Transistors and Their Technologies for Flexible Electronics

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 655
Author(s):  
Mohammad Javad Mirshojaeian Hosseini ◽  
Robert A. Nawrocki
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Mechanical Characteristics ◽  
Total Thickness ◽  
Silicon Oxides ◽  
Bending Radius ◽  
Semiconductor Fabrication ◽  
Thin Film Electronics

Flexible electronics enable various technologies to be integrated into daily life and fuel the quests to develop revolutionary applications, such as artificial skins, intelligent textiles, e-skin patches, and on-skin displays. Mechanical characteristics, including the total thickness and the bending radius, are of paramount importance for physically flexible electronics. However, the limitation regarding semiconductor fabrication challenges the mechanical flexibility of thin-film electronics. Thin-Film Transistors (TFTs) are a key component in thin-film electronics that restrict the flexibility of thin-film systems. Here, we provide a brief overview of the trends of the last three decades in the physical flexibility of various semiconducting technologies, including amorphous-silicon, polycrystalline silicon, oxides, carbon nanotubes, and organics. The study demonstrates the trends of the mechanical properties, including the total thickness and the bending radius, and provides a vision for the future of flexible TFTs.

Low Temperature Process Technologies for the Next Generation High Performance Polycrystalline Silicon Thin-Film Transistors

2001 ◽  
Vol 685 ◽  
Author(s):  
Seiichiro Higashi ◽  
Daisuke Abe ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Trap States ◽  
Laser Crystallization ◽  
Si Films ◽  
Low Temperature Process

AbstractLow temperature process technologies for high performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) are discussed based on the investigations of pulsed laser crystallization, plasma treatment of poly-Si films, and SiO2/Si interface formation. Although highdensity (∼1018 cm−3) trap states localized at grain boundaries are introduced to the poly-Si films by laser crystallization, they are efficiently decreased to the order of 1016 cm−3 by following hydrogen plasma treatment. It is also shown that high quality SiO2/Si interfaces with the density of interface trap states (Dit) in the order of 1010 cm−2eV−1 are achieved using electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD). By applying these low temperature process technologies to the fabrication process, high performance poly-Si TFTs with high n-channel mobility μn) of 187 cm2V−1s−1, low threshold voltage (Vth) of 1.97 V and small subthreshold swing (S) of 210 mV/dec. were obtained. These results indicate that the development of low temperature process technologies that can control trap states is the key to the next generation high performance poly-Si TFTs.

Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

Dynamic-Gate-Stress-Induced Degradation in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

2016 ◽  
Vol 63 (10) ◽  
pp. 3964-3970 ◽  
Author(s):  
Meng Zhang ◽  
Zhihe Xia ◽  
Wei Zhou ◽  
Rongsheng Chen ◽  
Man Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

Two‐step annealed polycrystalline silicon thin‐film transistors

1996 ◽  
Vol 80 (3) ◽  
pp. 1883-1890 ◽  
Author(s):  
Kwon‐Young Choi ◽  
Min‐Koo Han
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film
Sign in / Sign up

Export Citation Format

Share Document