Effect of deposition temperature on chemical composition and electronic properties of amorphous carbon nitride (a-CNx) thin films grown by plasma assisted pulsed laser deposition

2011 ◽  
Vol 519 (12) ◽  
pp. 4059-4063 ◽  
Author(s):  
E. Cappelli ◽  
D.M. Trucchi ◽  
S. Kaciulis ◽  
S. Orlando ◽  
A. Zanza ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Pulsed Laser Deposition ◽  
Electronic Properties ◽  
Amorphous Carbon ◽  
Deposition Temperature ◽  
Carbon Nitride ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Amorphous Carbon Nitride

BONDING PROPERTIES AND TEMPERATURE DEPENDENCE CHARACTERISTIC OF AMORPHOUS CARBON NITRIDE THIN FILMS PREPARED BY PULSED LASER DEPOSITION FOR SOLAR CELL APPLICATIONS

2005 ◽  
Vol 19 (03) ◽  
pp. 99-112 ◽  
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. UMENO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Conduction Band Edge ◽  
Temperature Conductivity ◽  
Amorphous Carbon Nitride

Amorphous carbon nitride (a-C:N) thin films are deposited by pulsed laser deposition technique at room temperature using a camphoric carbon target with different nitrogen partial pressures in the range from 0.1 to 800 mTorr. The room temperature conductivity (σ RT ) is found to increase with N incorporation, which may be due to the lattice vibrations leading to the scattering of the charge carriers by the N atoms and the more amorphous nature of the carbon films. Study of activation energy reveals that the Fermi level of the a-C:N film moves from the valence band to near the conduction band edge through the midgap. The current–voltage photovoltaic characteristics of a-C:N/p-Si cells under 1 sun air-mass 1.5 (AM 1.5) illumination condition (100 mW/cm2, 25°C) are improved up to 30 mTorr and deteriorate thereupon. The maximum of open-circuit voltage (V oc ) and short-circuit current density (J sc ) for the cells are observed to be approximately 292 mV and 9.02 mA/cm2, respectively. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 1.47% and 56%, respectively.

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

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