BONDING PROPERTIES AND TEMPERATURE DEPENDENCE CHARACTERISTIC OF AMORPHOUS CARBON NITRIDE THIN FILMS PREPARED BY PULSED LASER DEPOSITION FOR SOLAR CELL APPLICATIONS

2005 ◽  
Vol 19 (03) ◽  
pp. 99-112 ◽  
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. UMENO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Conduction Band Edge ◽  
Temperature Conductivity ◽  
Amorphous Carbon Nitride

Amorphous carbon nitride (a-C:N) thin films are deposited by pulsed laser deposition technique at room temperature using a camphoric carbon target with different nitrogen partial pressures in the range from 0.1 to 800 mTorr. The room temperature conductivity (σ RT ) is found to increase with N incorporation, which may be due to the lattice vibrations leading to the scattering of the charge carriers by the N atoms and the more amorphous nature of the carbon films. Study of activation energy reveals that the Fermi level of the a-C:N film moves from the valence band to near the conduction band edge through the midgap. The current–voltage photovoltaic characteristics of a-C:N/p-Si cells under 1 sun air-mass 1.5 (AM 1.5) illumination condition (100 mW/cm2, 25°C) are improved up to 30 mTorr and deteriorate thereupon. The maximum of open-circuit voltage (V oc ) and short-circuit current density (J sc ) for the cells are observed to be approximately 292 mV and 9.02 mA/cm2, respectively. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 1.47% and 56%, respectively.

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

THE EFFECTS OF BORON CONTENT IN THE TARGET OF PULSED LASER DEPOSITION ON THE PROPERTIES OF BORON DOPED AMORPHOUS CARBON THIN FILMS

2004 ◽  
Vol 18 (26n27) ◽  
pp. 1379-1393 ◽  
Author(s):  
M. RUSOP ◽  
X. M. TIAN ◽  
T. KINUGAWA ◽  
T. SOGA ◽  
T. JIMBO ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Boron Content ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Graphite Target ◽  
Boron Doped

The effects of boron content in camphoric carbon (CC) and graphite target of pulsed laser deposition (PLD) prepared in vacuum at room temperature on the properties of boron doped amorphous carbon (a-C:B) thin films has been studied. Deposited a-C:B films have been investigated using standard measurement techniques and the effects of B weight percentages (Bwt%) in the target are discussed. The variation of surface morphology, bonding and structural properties, as well as the optical gap (Eg) and electrical resistivity (ρ) of a-C:B films deposited using a CC target are related to the successful doping of B for low B content in the amorphous carbon (a-C) films as the structure and Eg remain almost unchanged, and the ρ decreased for the film deposited using graphite target with B powder up to 10 Bwt%. Since both Eg and ρ decreased sharply with higher Bwt%, this phenomenon may be due to graphitization. For a-C:B films deposited using graphite target with low B content at 1 and 3 Bwt%, as the Eg is observed to increase only slightly when compared with undoped a-C films and with the decrease of ρ, we speculated that the B incorporation induced successful of doping is responsible for the decrease in ρ.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

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