X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS BY THE MEANS OF X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES

2005 ◽  
Vol 19 (11) ◽  
pp. 1925-1942
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Deposition Process ◽  
Atomic Ratio ◽  
X Ray ◽  
Bonding Properties ◽  
Amorphous Carbon Nitride ◽  
Spectroscopy Studies

Amorphous carbon nitride films (a -CN x) were deposited by pulsed laser deposition of camphoric carbon target at different substrate temperatures (ST). The influence of ST on the bonding properties of a -CN x films was investigated. The nitrogen to carbon (N/C) atomic ratio and oxygen to carbon (O/C) atomic ratio, bonding state and microstructure of the deposited a -CN x films were characterized by X-ray photoelectron spectroscopy and confirmed by other standard measurement techniques. The bonding states between the C and N, and C and O in the deposited films are found significantly influenced by the ST during deposition process. The N/C and O/C atomic ratio of the a -CN x films reached the maximum value at 400°C. The ST of 400°C was proposed to promote the desired sp3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N, C=N and C–N were observed in the deposited a -CN x films.

BONDING PROPERTIES AND TEMPERATURE DEPENDENCE CHARACTERISTIC OF AMORPHOUS CARBON NITRIDE THIN FILMS PREPARED BY PULSED LASER DEPOSITION FOR SOLAR CELL APPLICATIONS

2005 ◽  
Vol 19 (03) ◽  
pp. 99-112 ◽  
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. UMENO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Conduction Band Edge ◽  
Temperature Conductivity ◽  
Amorphous Carbon Nitride

Amorphous carbon nitride (a-C:N) thin films are deposited by pulsed laser deposition technique at room temperature using a camphoric carbon target with different nitrogen partial pressures in the range from 0.1 to 800 mTorr. The room temperature conductivity (σ RT ) is found to increase with N incorporation, which may be due to the lattice vibrations leading to the scattering of the charge carriers by the N atoms and the more amorphous nature of the carbon films. Study of activation energy reveals that the Fermi level of the a-C:N film moves from the valence band to near the conduction band edge through the midgap. The current–voltage photovoltaic characteristics of a-C:N/p-Si cells under 1 sun air-mass 1.5 (AM 1.5) illumination condition (100 mW/cm2, 25°C) are improved up to 30 mTorr and deteriorate thereupon. The maximum of open-circuit voltage (V oc ) and short-circuit current density (J sc ) for the cells are observed to be approximately 292 mV and 9.02 mA/cm2, respectively. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 1.47% and 56%, respectively.

Structural Properties of Carbon Nitride Films Deposited by Reactive - Pulsed Laser Deposition Technique

2001 ◽  
Vol 695 ◽  
Author(s):  
A.R. Phani ◽  
J.E. Krzanowski ◽  
J.J. Nainaparampil
Keyword(s):  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Nitrogen Concentration ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray ◽  
Deposited Films

ABSTRACTCarbon nitride films have been deposited by the reactive pulsed laser deposition technique by ablating carbon in a nitrogen atmosphere at different substrate temperatures and different background pressures of nitrogen. Si(111) and 440C steel substrates were used in the present investigation. Deposited films are uniform and show good adhesion to the substrates. The deposition rates depend on laser fluence, background pressure, and target-substrate distance. The nitrogen concentration in the deposited films increases with increasing background nitrogen gas pressure and laser fluence. Fourier transform infrared spectroscopy has been employed to evaluated CN bonds. X-ray photoelectron spectroscopy has been used to study the composition of the deposited films. X-ray diffraction and atomic force microscopy techniques revealed that the deposited films have an oriented microcrystalline structure after annealing at 900°C with smooth surface. Electronic, mechanical and tribological properties of these films have also been discussed.

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