Atmospheric-pressure argon plasma etching of spin-coated 3,4-polyethylenedioxythiophene:polystyrenesulfonic acid (PEDOT:PSS) films for cupper phtalocyanine (CuPc)/C60 heterojunction thin-film solar cells

2011 ◽  
Vol 519 (20) ◽  
pp. 6834-6839 ◽  
Author(s):  
Tomohisa Ino ◽  
Tatsuya Hayashi ◽  
Keiji Ueno ◽  
Hajime Shirai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Argon Plasma ◽  
Thin Film Solar Cells

scholarly journals Effects of Sulfurization Pressure on the Conversion Efficiency of Cosputtered Cu2ZnSnS4Thin Film Solar Cells

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Arun Khalkar ◽  
Kwang-Soo Lim ◽  
Seong-Man Yu ◽  
Dong-Wook Shin ◽  
Tae-Sik Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Comparative Study ◽  
Conversion Efficiency ◽  
Atmospheric Pressure ◽  
Antireflection Coating ◽  
Thin Film Solar Cells ◽  
Czts Thin Film ◽  
Tin Sulfide ◽  
Device Efficiency

We report herein Cu2ZnSnS4(CZTS) thin film solar cells with 6.75% conversion efficiency, without an antireflection coating. The CZTS precursors have been prepared by cosputtering using three different targets on Mo-coated substrates: copper (Cu), tin sulfide (SnS), and zinc (Zn). The postsulfurization was carried out at different pressures in a H2S/N2environment at 550°C for one hour. A comparative study on the performances of solar cells with CZTS absorber layers prepared at different sulfurization pressures was carried out. The device efficiency of 1.67% using CZTS absorber and low pressure sulfurization is drastically improved, to an efficiency of 6.75% with atmospheric pressure sulfurization.

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