Capacitance–voltage characterization of silicon oxide and silicon nitride coatings as passivation layers for crystalline silicon solar cells and investigation of their stability against x-radiation

2011 ◽  
Vol 519 (19) ◽  
pp. 6525-6529 ◽  
Author(s):  
Jan Martin Kopfer ◽  
Sinje Keipert-Colberg ◽  
Dietmar Borchert
2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Abdullah Uzum ◽  
Hiroyuki Kanda ◽  
Takuma Noguchi ◽  
Yuya Nakazawa ◽  
Shota Taniwaki ◽  
...  

Aluminum acetylacetonate-based AlOx thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O2, or water vapor (H2O/O2) for 15 or 120 min. XPS analysis confirms the AlOx formation and reveals a high intensity of interfacial SiOx at the AlOx/Si interface of processed wafers. Ambient H2O/O2 was found to be more beneficial for the activation of introduced AlOx passivation films which offers high lifetime improvements with a low thermal budget. Carrier lifetime measurements provides that symmetrically coated wafers reach 119.3 μs and 248.3 μs after annealing in ambient H2O/O2 for 15 min and 120 min, respectively.


2017 ◽  
Vol 56 (4S) ◽  
pp. 04CS01 ◽  
Author(s):  
Takeshi Tayagaki ◽  
Daichi Furuta ◽  
Osamu Aonuma ◽  
Isao Takahashi ◽  
Yusuke Hoshi ◽  
...  

2010 ◽  
Author(s):  
Sebastian Knabe ◽  
Sebastian Wilken ◽  
Johannes Üpping ◽  
Ralf B. Wehrspohn ◽  
Gottfried H. Bauer

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