Ferroelectric and dielectric multilayer heterostructures based on KTa0.65Nb0.35O3 and Bi1.5-xZn0.92-yNb1.5O6.92–1.5x-y grown by pulsed laser deposition and chemical solution deposition for high frequency tunable devices

A new series of rare earth-niobate, RE3NbO7 (RE=Y,Gd,Eu), buffer layers were developed for the growth of superconducting YBa2Cu3O7−δ (YBCO) films on biaxially textured Ni–W (3 at.%) substrates. Using chemical solution deposition, smooth, crack-free, and epitaxial RE3NbO7 (RE = Y,Gd,Eu) films were grown on cube-textured Ni–W substrate. YBCO film with a critical current density of 1.1 × 106 A/cm2 in self-field at 77 K was grown directly on a single Gd3NbO7-buffered Ni–W substrate using pulsed laser deposition.

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Porous Fe3O4 thin films by pulsed laser assisted chemical solution deposition at room temperature

Applied Surface Science ◽

10.1016/j.apsusc.2019.01.282 ◽

2019 ◽

Vol 478 ◽

pp. 408-411 ◽

Cited By ~ 3

Author(s):

Yanqiu Liu ◽

Renhuai Wei ◽

Wei Ding ◽

Xin Wang ◽

Wenhai Song ◽

...

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Room Temperature ◽

Pulsed Laser ◽

Chemical Solution ◽

Solution Deposition

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Epitaxial Growth Mechanism for Perovskite Oxide Thin Films under Pulsed Laser Irradiation in Chemical Solution Deposition Process

Chemistry of Materials ◽

10.1021/cm801803g ◽

2008 ◽

Vol 20 (23) ◽

pp. 7344-7351 ◽

Cited By ~ 54

Author(s):

Tomohiko Nakajima ◽

Tetsuo Tsuchiya ◽

Masaki Ichihara ◽

Hideaki Nagai ◽

Toshiya Kumagai

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Growth Mechanism ◽

Chemical Solution Deposition ◽

Pulsed Laser ◽

Deposition Process ◽

Perovskite Oxide ◽

Chemical Solution ◽

Solution Deposition ◽

Pulsed Laser Irradiation

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Advanced Properties of Silicon Oxynitride (SiOxNy) Thin Films Prepared by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-388-115 ◽

1995 ◽

Vol 388 ◽

Author(s):

R.-F. Xiao ◽

L.C. Ng ◽

H.B. Liao

Keyword(s):

Thin Films ◽

Kinetic Energy ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Chemical Vapor ◽

Silicon Oxynitride ◽

Laser Deposition ◽

Chemical Solution ◽

Conventional Chemical Vapor Deposition

AbstractA pulsed laser deposition technique has been used to grow silicon oxynitride (SiOxNy) thin films at low deposition temperatures (25°C - 300°C). the thin films were found to be quite smooth in surface morphology, extremely inert in chemical solution and highly transparent in the optical range of 0.3 μm to 5 μm. the refractive index was tunable between 1.4 - 2.1 by the addition of oxygen in substitution of nitrogen in the film, and the dielectric constant is much larger than the similar films grown by conventional chemical vapor deposition. the high quality of the SiOxNy films deposited at such low temperatures was resulted from the large kinetic energy carried by the impinging particles created by the ablation of a high-power pulsed excimer laser. the kinetic energy of the impinged particles on the substrate provides thermal energy for surface diffusion and relaxation.

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High-frequency electromagnetic properties of epitaxial Bi2FeCrO6 thin films grown by pulsed laser deposition

Applied Physics Letters ◽

10.1063/1.3657528 ◽

2011 ◽

Vol 99 (18) ◽

pp. 183505 ◽

Cited By ~ 11

Author(s):

Brahim Aïssa ◽

Riad Nechache ◽

Daniel Therriault ◽

Federico Rosei ◽

Mourad Nedil

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

High Frequency ◽

Pulsed Laser ◽

Laser Deposition ◽

Electromagnetic Properties

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Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100148022 ◽

1993 ◽

Vol 51 ◽

pp. 438-439

Author(s):

Michael P. Mallamaci ◽

James Bentley ◽

C. Barry Carter

Keyword(s):

Liquid Phase ◽

Single Crystal ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ceramic Materials ◽

Laser Deposition ◽

Triple Junctions ◽

Ion Milling ◽

Multicomponent Oxides ◽

Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

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