Ti-doped Gd2O3 sensing membrane for electrolyte–insulator–semiconductor pH sensor

2012 ◽  
Vol 520 (10) ◽  
pp. 3760-3763 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Jer Chyi Wang ◽  
Chao Sung Lai ◽  
Chuan Yu Huang ◽  
Jiun Cheng Ou ◽  
...  
Keyword(s):  
Ph Sensor ◽  
Sensing Membrane

PH SENSITIVITY DEPENDENCY ON THE ANNEALING TEMPERATURE OF SPIN-COATED TITANIUM DIOXIDE THIN FILMS

2016 ◽  
Vol 78 (5-8) ◽  
Author(s):  
Khairul Aimi Yusof ◽  
Rohanieza Abdul Rahman ◽  
Muhammad AlHadi Zulkefle ◽  
Sukreen Hana Herman ◽  
Wan Fazlida Hanim Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Titanium Dioxide ◽  
Indium Tin Oxide ◽  
Ph Sensor ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Ito Glass ◽  
Ito Thin Films ◽  
Sensing Membrane

Titanium dioxide (TiO2) thin films were fabricated on indium tin oxide (ITO) glass substrates using the spin coating technique and further were implemented as sensing membranes of the extended gate field effect transistor (EGFET) based pH sensor. The as-deposited thin films were annealed at different temperatures from 200 - 600 °C in room ambient for 20 min. The effects of different annealing temperatures on electrical and crystalline properties were analyzed by I-V two point probes measurement and X-ray diffraction respectively. Meanwhile, the surface morphology of thin films was observed by field emission scanning electron microscope (FESEM). We then measured the transfer characteristics (ID-VG) of the TiO2/ITO sensing membrane using a semiconductor parametric device analyzer for sensor characterization. It was found that, TiO2/ITO sensing membrane annealed at 300 °C achieved higher sensitivity and good linearity of 51.48 mV/pH and 0.99415, respectively in the pH buffer solutions of 4, 7, 10, and 12. Thin film annealed at 300 °C gives higher conductivity thin film of 384.62 S/m. We found that the conductivity of TiO2/ITO thin films was proportional with the sensitivity of sensing membrane.  

scholarly journals Spin Speed and Duration Dependence of TiO2Thin Films pH Sensing Behavior

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Muhammad AlHadi Zulkefle ◽  
Rohanieza Abdul Rahman ◽  
Khairul Aimi Yusof ◽  
Wan Fazlida Hanim Abdullah ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Oxide Semiconductor ◽  
Ph Sensing ◽  
Spin Speed ◽  
Coating Method ◽  
Effect Transistor ◽  
Sensing Membrane

Titanium dioxide (TiO2) thin films were applied as the sensing membrane of an extended-gate field-effect transistor (EGFET) pH sensor. TiO2thin films were deposited by spin coating method and the influences of the spin speed and spin duration on the pH sensing behavior of TiO2thin films were investigated. The spin coated TiO2thin films were connected to commercial metal-oxide-semiconductor field-effect transistor (MOSFET) to form the extended gates and the MOSFET was integrated in a readout interfacing circuit to complete the EGFET pH sensor system. For the spin speed parameter investigation, the highest sensitivity was obtained for the sample spun at 3000 rpm at a fixed spinning time of 60 s, which was 60.3 mV/pH. The sensitivity was further improved to achieve 68 mV/pH with good linearity of 0.9943 when the spin time was 75 s at the speed of 3000 rpm.

scholarly journals EVALUATION ON THE EGFET PH SENSING PERFORMANCE OF SOL-GEL SPIN COATED TITANIUM DIOXIDE THIN FILM

2021 ◽  
Vol 83 (4) ◽  
pp. 119-125
Author(s):  
Muhammad AlHadi Zulkefle ◽  
Sukreen Hana Herman ◽  
Rohanieza Abdul Rahman ◽  
Khairul Aimi Yusof ◽  
Aimi Bazilah Rosli ◽  
...  
Keyword(s):  
Thin Film ◽  
Tio2 Thin Film ◽  
Drift Rate ◽  
Sol Gel ◽  
Ph Sensor ◽  
Ph Sensing ◽  
Coating Method ◽  
Effect Transistor ◽  
Sensing Membrane ◽  
Sensing Performance

For this study, TiO2 thin film was fabricated using the sol-gel spin coating method. The fabricated film was then applied as a sensing membrane in an extended gate field effect transistor (EGFET) pH sensor system. The pH sensing performance of the sol-gel spin-coated TiO2 was evaluated in terms of sensitivity, linearity, and hysteresis where the value obtained was 58.70 mV/pH, 0.9922, and 86.17 mV respectively. The drift rate of the sample when being measured for 12 consecutive hours was also determined where measurement in pH 4, pH 7, and pH 10 yield drift rate of 1.72 mV/h, 4.14 mV/h, and 6.05 mV/h respectively.  Besides that, the TiO2 was characterized for its thickness (24.32 nm) and surface roughness (5.129 nm). From the results obtained, it was found that sol-gel spin-coated TiO2 thin film with thickness between 20 - 29 nm will have high pH sensitivity (more than 50 mV/pH).

scholarly journals EGFET pH Sensor Performance Dependence on Sputtered TiO2Sensing Membrane Deposition Temperature

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Khairul Aimi Yusof ◽  
Rohanieza Abdul Rahman ◽  
Muhammad AlHadi Zulkefle ◽  
Sukreen Hana Herman ◽  
Wan Fazlida Hanim Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Ph Sensor ◽  
Lower Sensitivity ◽  
Ph Sensing ◽  
The One ◽  
Sensing Membrane

Titanium dioxide (TiO2) thin films were sputtered by radio frequency (RF) magnetron sputtering method and have been employed as the sensing membrane of an extended gate field effect transistor (EGFET) for pH sensing detection application. The TiO2thin films were deposited onto indium tin oxide (ITO) coated glass substrates at room temperature and 200°C, respectively. The effect of deposition temperature on thin film properties and pH detection application was analyzed. The TiO2samples used as the sensing membrane for EGFET pH-sensor and the current-voltage (I-V), hysteresis, and drift characteristics were examined. The sensitivity of TiO2EGFET sensing membrane was obtained from the transfer characteristic (I-V) curves for different substrate heating temperatures. TiO2thin film sputtered at room temperature achieved higher sensitivity of 59.89 mV/pH compared to the one deposited at 200°C indicating lower sensitivity of 37.60 mV/pH. Moreover the hysteresis and the drift of TiO2thin film deposited at room temperature showed lower values compared to the one at 200°C. We have also tested the effect of operating temperature on the performance of the EGFET pH-sensing and found that the temperature effect was very minimal.

STUDY ON THE POTENTIOMETRIC GLUCOSE BIOSENSOR BASED ON THE SnO2/ITO/PET

2009 ◽  
Vol 21 (06) ◽  
pp. 411-414 ◽  
Author(s):  
Sheng-Kai Li ◽  
Jung-Chuan Chou ◽  
Tai-Ping Sun ◽  
Shen-Kan Hsiung
Keyword(s):  
Thin Film ◽  
Glucose Oxidase ◽  
Calibration Curve ◽  
Ph Sensor ◽  
Rf Sputtering ◽  
Glucose Biosensor ◽  
Carbon Nano Tubes ◽  
Semiconductor Fabrication ◽  
Sensing Membrane ◽  
Pet Substrate

A potentiometric glucose biosensor based on a SnO2/ITO/PET substrate is presented in this study. The sensing membrane of SnO2 is coated on ITO/PET substrate by utilized radio frequency (RF)-sputtering method of semiconductor fabrication. The potentiometric glucose biosensor is established on an FET-type pH sensor. Therein, the glucose oxidase (GOD) and chitosan/multi-wall carbon nano-tubes (chitosan/MWCNTs) are immobilized by 3-glycidoxypropyl trimethoxysilane (3-GPTS). Finally, the drift characteristic and calibration curve of the potentiometric pH sensor and potentiometric glucose biosensor is discussed in the following article. We find the nonideal effect of device reduced significantly, due to the coating of SnO2 thin film.

High Sensitive Nanocrystal Titanium Nitride EG-FET pH Sensor

2013 ◽  
Vol 802 ◽  
pp. 232-236 ◽  
Author(s):  
Yossawat Rayanasukha ◽  
Supanit Porntheeraphat ◽  
Win Bunjongpru ◽  
Narathon Khemasiri ◽  
Apirak Pankiew ◽  
...  
Keyword(s):  
Thin Film ◽  
High Efficiency ◽  
Ph Sensor ◽  
X Ray Diffraction ◽  
Substrate Heating ◽  
Buffer Solutions ◽  
Glancing Angle ◽  
Effect Transistor ◽  
Sensing Membrane ◽  
Sensing Characteristics

Solid state pH-sensor device with high efficiency has successfully prepared by using TiN thin film as sensing membrane of extended gate field effect transistor (EG-FET) device. This research has described the physical properties and sensing characteristics of TiN membrane thin film which deposited on SiO2/Si substrate through reactive D.C. magnetron sputtering system. Thenanocrytal-TiNwith anatasestructure depended on substrate heating conditions was revealed from glancing angle x-ray diffraction. The IDS-VGS measurement in the standard buffer solutions showed that the sensitivity of fabricated TiN-EGFET pH deviceis 59.82mV/pH.

Sensing capability of TiO2 thin films with different thicknesses as sensing membrane of EGFET pH sensor

2015 ◽  
Author(s):  
Muhammad AlHadi Zulkefle ◽  
Rohanieza Abdul Rahman ◽  
Mohamad Rusop Mahmood ◽  
Wan Fazlida Hanim Abdullah ◽  
Sukreen Hana Herman
Keyword(s):  
Thin Films ◽  
Ph Sensor ◽  
Sensing Membrane
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