Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

2013 ◽  
Vol 534 ◽  
pp. 470-473 ◽  
Author(s):  
K.O. Hara ◽  
Y. Hoshi ◽  
N. Usami ◽  
Y. Shiraki ◽  
K. Nakamura ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Structural Study ◽  
Epitaxial Films ◽  
Phosphorus Doping

Structural Study of BF$_{2}$ Ion Implantation and Post Annealing of BaSi$_{2}$ Epitaxial Films

2011 ◽  
Vol 50 ◽  
pp. 121202 ◽  
Author(s):  
Kosuke O. Hara ◽  
Noritaka Usami ◽  
Yusuke Hoshi ◽  
Yasuhiro Shiraki ◽  
Mitsushi Suzuno ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Structural Study ◽  
Epitaxial Films ◽  
Post Annealing

STRUCTURAL STUDY OF PZT/YBCO BY TRIPLE-AXES DIFFRACTION

1999 ◽  
Vol 13 (04) ◽  
pp. 383-387
Author(s):  
Z. H. MAI ◽  
A. I. ZHU ◽  
B. T. LIU ◽  
C. R. LI ◽  
S. F. CUI ◽  
...  
Keyword(s):  
Structural Study ◽  
Lattice Parameter ◽  
Epitaxial Films ◽  
Crystalline Quality ◽  
Ybco Layer ◽  
Different Thickness

The structures of Pb ( Zr x Ti 1-x) O 3/ YBCO heterostructure with different thickness of PZT sublayer were investigated. The lattice parameter, c of YBCO layer is obtained to be c=11.686±0.001 Å, being of 0.2% larger than that of the bulk one. The lattice parameter, c of PZT layer is c=4.116±0.001 Å, indicating that the composition of the sample is Pb ( Zr 0.48 Ti 0.52) O 3. The misorientations of YBCO/PZT sublayers were observed in the samples B and D. The effect of the crystalline quality of the STO substrate on the quality of the YBCO and PZT epitaxial films was discussed.

scholarly journals Влияние условий формирования геттера в высокоомном кремнии на характеристики PIN-фотодиодов

2020 ◽  
Vol 46 (21) ◽  
pp. 11
Author(s):  
И.Б. Чистохин ◽  
К.Б. Фрицлер
Keyword(s):  
Ion Implantation ◽  
Dark Current ◽  
Carrier Lifetime ◽  
High Resistivity ◽  
Phosphorus Doping ◽  
Polysilicon Film ◽  
Pin Photodiode ◽  
Current Value ◽  
Dark Currents ◽  
High Resistivity Silicon

The influence of gettering conditions in high resistivity silicon during the PIN photodiode fabrication process on the reverse dark currents has been studied. It was demonstrated that the getter formation of backside substrate by a combination of phosphorus ion implantation and deposition of polysilicon film followed by phosphorus doping at the temperatures below 900 0C results in reduction of reverse dark current value and increasing of nonequilibrium carrier lifetime.

Boron and phosphorus doping of a-SiC:H thin films by means of ion implantation

1995 ◽  
Vol 265 (1-2) ◽  
pp. 113-118 ◽  
Author(s):  
F. Demichelis ◽  
G. Crovini ◽  
C.F. Pirri ◽  
E. Tresso ◽  
R. Galloni ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Phosphorus Doping

Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

2003 ◽  
Vol 101 (1-3) ◽  
pp. 124-127 ◽  
Author(s):  
B.E. Umirzakov ◽  
D.A. Tashmukhamedova ◽  
E.U. Boltaev ◽  
A.A. Dzhurakhalov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Metal Silicides

Phosphorus doping of ZnO using spin‐on dopant process: A better choice than costly and destructive ion-implantation technique

2021 ◽  
Vol 233 ◽  
pp. 117921
Author(s):  
Madhuri Mishra ◽  
Sushama Sushama ◽  
Sushil Kumar Pandey ◽  
Subhananda Chakrabarti
Keyword(s):  
Ion Implantation ◽  
Implantation Technique ◽  
Phosphorus Doping

Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films

2021 ◽  
Vol 39 (4) ◽  
pp. 043413
Author(s):  
Rakesh Kumar Pandey ◽  
Puspashree Mishra ◽  
Akhilesh Pandey ◽  
Shankar Dutta ◽  
Aman Arora ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Epitaxial Films
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