Leakage current under high electric fields and magnetic properties in Co and Mn co-substituted BiFeO3 polycrystalline films

Ferroelectric barium strontium titanate (BaxSr1-xTiO3) thin films with different Ba content have been fabricated as MFM configuration using sol-gel technique. The effect of barium-to-strontium ratio on the leakage current mechanism of BaxSr1-xTiO3 thin films has been investigated. The results show that the leakage current density increases as Ba content increases, which attributed to the grain size effect. The leakage current for the tested films has been studied using log (J) vs log (E) plane, which shows three distinguished linear regions. These regions have been characterized using power law () to find that: the region at low electric fields (E < 20 KV/cm) is controlled by Ohmic conduction and the other two regions (E > 20 KV/cm) are due to space charge limited conduction, which is also confirmed via modified Langmuir-Child law. In addition, it is observed that at high electric fields region (E > 1.29×105 V/m) the films show Schottky emission (SE) and PooleFrenkel (PF) emission mechanisms.

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Changes in the Electrical Conduction Mechanism with the Electrical Degradation of BaTiO3-Based Ceramics

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.388.201 ◽

2008 ◽

Vol 388 ◽

pp. 201-204 ◽

Cited By ~ 9

Author(s):

Makito Nakano ◽

Akira Saito ◽

Nobuyuki Wada

Keyword(s):

Leakage Current ◽

Electric Fields ◽

Electrical Conduction ◽

Conduction Mechanism ◽

Total Current ◽

Degradation Mechanisms ◽

Dielectric Layers ◽

Electrical Degradation ◽

Frenkel Emission ◽

High Electric Fields

The electrical degradation mechanisms of BaTiO3-based ceramics were investigated by measuring the dependence of leakage current on high electric fields. Before the degradation, the leakage current predominately obeyed Ohm’s law and Poole-Frenkel relation. As the degradation progressed, the Poole-Frenkel emission current increased. Moreover, the total current at the high electric fields also comprised Schottky emissions between cathodes and dielectric layers.

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Thickness Dependence of Leakage Current Behavior in Epitaxial (Ba,Sr)TiO3 Thin Films

MRS Proceedings ◽

10.1557/proc-688-c13.7.1 ◽

2001 ◽

Vol 688 ◽

Author(s):

Kun Ho Ahn ◽

Sang Sub Kim ◽

Sunggi Baik

Keyword(s):

Thin Films ◽

Film Thickness ◽

Leakage Current ◽

Electric Fields ◽

Thickness Dependence ◽

Schottky Emission ◽

Field Range ◽

Critical Film Thickness ◽

High Electric Fields ◽

Current Behavior

AbstractThickness dependence of leakage current behaviors was investigated in epitaxial (Ba0.5Sr0.5)TiO3 thin films with different thicknesses of 55 - 225 nm prepared on Pt(001)/MgO(001) substrates by a radio-frequency magnetron sputtering technique. Below a certain critical film thickness (≤ 55 nm), the Schottky emission is a ruling leakage conduction mechanism over a wide electric field range. In contrast, in thicker films (> 55 nm), the Schottky emission still operates at low electric fields, however at high electric fields the Fowler-Nordheim (F-N) tunneling dominates. The transition film thickness appears to be associated with overlapping of the depletion layers formed at the top and bottom electrode interfaces.

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Atomic Spectroscopy in the FIM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145157 ◽

1986 ◽

Vol 44 ◽

pp. 758-761

Author(s):

J. J. Hren ◽

S. D. Walck

Keyword(s):

Electron Microscope ◽

Electric Fields ◽

Atom Probe ◽

Atomic Spectroscopy ◽

Single Atom ◽

Statistical Sampling ◽

Commercial Instrument ◽

Available Technology ◽

High Electric Fields ◽

Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

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Theoretical Transport Studies of Non-equilibrium Carriers Driven by High Electric Fields

10.21236/ada559996 ◽

2012 ◽

Author(s):

Alden Astwood ◽

V. M. Kenkre

Keyword(s):

Electric Fields ◽

Transport Studies ◽

High Electric Fields ◽

Non Equilibrium

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Metal-glass contacts in high electric fields

Electronics Letters ◽

10.1049/el:19690051 ◽

1969 ◽

Vol 5 (4) ◽

pp. 72 ◽

Cited By ~ 1

Author(s):

K.J. McLean

Keyword(s):

Electric Fields ◽

High Electric Fields

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Dielectric Spectroscopy at High Electric Fields

ACS Symposium Series - Broadband Dielectric Spectroscopy: A Modern Analytical Technique ◽

10.1021/bk-2021-1375.ch004 ◽

2021 ◽

pp. 91-104

Author(s):

Ranko Richert

Keyword(s):

Electric Fields ◽

Dielectric Spectroscopy ◽

High Electric Fields

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High Field Electron Drift in a-Si:H

MRS Proceedings ◽

10.1557/proc-297-425 ◽

1993 ◽

Vol 297 ◽

Author(s):

Qing Gu ◽

Eric A. Schiff ◽

Jean Baptiste Chevrier ◽

Bernard Equer

Keyword(s):

Electric Fields ◽

High Field ◽

Drift Mobility ◽

Time Range ◽

Electron Drift ◽

Parameter Change ◽

Transient Photocurrent ◽

Field Mobility ◽

High Electric Fields ◽

Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

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