Reactive sputter deposition and annealing of nanometer scale NiO thin films for metal-insulator-metal tunnel junction diodes

2017 ◽  
Vol 644 ◽  
pp. 23-28 ◽  
Author(s):  
A. Singh ◽  
S. Bhansali ◽  
D. Barton ◽  
F.K. Urban
Keyword(s):  
Thin Films ◽  
Tunnel Junction ◽  
Sputter Deposition ◽  
Nanometer Scale ◽  
Metal Insulator ◽  
Reactive Sputter Deposition ◽  
Metal Insulator Metal

Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

2011 ◽  
Vol 519 (11) ◽  
pp. 3831-3834 ◽  
Author(s):  
M. Lukosius ◽  
C. Baristiran Kaynak ◽  
Ch. Wenger ◽  
G. Ruhl ◽  
S. Rushworth ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Vapor ◽  
Metal Insulator ◽  
Metal Insulator Metal

Nanometer-Scale Composite Structures Formed by Simultaneous Oblique Sputter-Deposition of Two Materials from Different Directions

1990 ◽  
Vol 206 ◽  
Author(s):  
Tomoyoshi Motohiro ◽  
Yasuhiko Takeda ◽  
Yoshihide Watanabe ◽  
Shoji Noda
Keyword(s):  
Composite Structures ◽  
Polar Angle ◽  
Sputter Deposition ◽  
Nanometer Scale ◽  
Metal Insulator ◽  
Host Materials ◽  
Oblique Deposition ◽  
Host Structure ◽  
Optical Applications ◽  
Nonlinear Optical Applications

ABSTRACTOblique depositlon(OD) provides an attractive anisotropic structure In nm-scale as a promising host structure to form anisotropic nm-scale composites(ANSC). Among a variety of possible methods to introduce a guest material Into the host structure of OD, we have attempted simultaneous oblique deposition of a guest and a host material from two different directions. The computer simulation for ballistic deposition, which had greatly contributed to the understanding of the morphology evolution in OD, has been carried out again here to design possible ANSC structures and to survey their variations. A typical ANSC structure obtained here is a composite of slender clusters of the guest and the host materials, which can be regarded as an anisotropic version of the well-known isotropic structures of the metal-insulator or semiconductor-insulator cermets for magneto-optical or nonlinear optical applications. This appears when the host and the guest materials are deposited from the directions of the same polar angle of 70° but from the reverse azimuthal directions. In accordance with this result, a specially designed sputtering apparatus has been constructed. Structures and optical anisotropy of the films of several composites' systems such as ZnTe-SiO2 and Cu-SiO2 formed by this apparatus have indicated that our attempt has hit the mark.

Diagnostics of a N2/Ar direct current magnetron discharge for reactive sputter deposition of fullerene-like carbon nitride thin films

2003 ◽  
Vol 94 (11) ◽  
pp. 7059-7066 ◽  
Author(s):  
J. Neidhardt ◽  
L. Hultman ◽  
B. Abendroth ◽  
R. Gago ◽  
W. Möller
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Carbon Nitride ◽  
Sputter Deposition ◽  
Magnetron Discharge ◽  
Reactive Sputter Deposition

Enhancement on crystallinity property of low annealed PbTiO3 thin films for metal-insulator-metal capacitor

2018 ◽  
Author(s):  
Z. Nurbaya ◽  
M. H. Wahid ◽  
M. D. Rozana ◽  
S. A. H. Alrokayan ◽  
H. A. Khan ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Insulator ◽  
Metal Insulator Metal

Application of ZnO to Passivate the GaN-based Device Structures

2007 ◽  
Vol 1035 ◽  
Author(s):  
Eliana Kaminska ◽  
Anna Piotrowska ◽  
Marie-Antoinette di Forte Poisson ◽  
Sylvain Delage ◽  
Hacene Lahreche ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
High Resistivity ◽  
Leakage Currents ◽  
Gan Hemt ◽  
Reactive Sputter Deposition ◽  
Device Structures ◽  
Hygroscopic Nature ◽  
Output Characteristics ◽  
Lattice Matched

AbstractThe fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si3N4 films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT.

Reactive sputter deposition of crystalline Cr/C/F thin films

1994 ◽  
Vol 18 (5-6) ◽  
pp. 251-256 ◽  
Author(s):  
M.J. O'Keefe ◽  
J.M. Rigsbee
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
Reactive Sputter Deposition
Sign in / Sign up

Export Citation Format

Share Document