Reactive Sputter Deposition of Lithium Phosphorus Oxynitride Thin Films

AbstractThe fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si3N4 films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT.

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Reactive sputter deposition of crystalline Cr/C/F thin films

Materials Letters ◽

10.1016/0167-577x(94)90003-5 ◽

1994 ◽

Vol 18 (5-6) ◽

pp. 251-256 ◽

Cited By ~ 3

Author(s):

M.J. O'Keefe ◽

J.M. Rigsbee

Keyword(s):

Thin Films ◽

Sputter Deposition ◽

Reactive Sputter Deposition

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Reactive sputter deposition of tungsten nitride thin films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1498278 ◽

2002 ◽

Vol 20 (5) ◽

pp. 1699-1703 ◽

Cited By ~ 34

Author(s):

Colin C. Baker ◽

S. Ismat Shah

Keyword(s):

Thin Films ◽

Sputter Deposition ◽

Tungsten Nitride ◽

Reactive Sputter Deposition

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Reactive sputter deposition and properties of TaxN thin films

Microelectronic Engineering ◽

10.1016/s0167-9317(02)00801-8 ◽

2002 ◽

Vol 64 (1-4) ◽

pp. 289-297 ◽

Cited By ~ 114

Author(s):

T Riekkinen ◽

J Molarius ◽

T Laurila ◽

A Nurmela ◽

I Suni ◽

...

Keyword(s):

Thin Films ◽

Sputter Deposition ◽

Reactive Sputter Deposition

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Effect of Electroless Copper on the Growth of ZnO Nanowires

Journal of Materials Research ◽

10.1557/jmr.2005.0286 ◽

2005 ◽

Vol 20 (9) ◽

pp. 2348-2353 ◽

Cited By ~ 6

Author(s):

Wen-Ting Chiou ◽

Wan-Yu Wu ◽

Jyh-Ming Ting

Keyword(s):

Thin Films ◽

Deposition Time ◽

Average Length ◽

Average Diameter ◽

Sputter Deposition ◽

Zno Nanowires ◽

Zno Thin Films ◽

Silicon Substrates ◽

Reactive Sputter Deposition ◽

Electroless Copper

ZnO nanowires along with ZnO thin films were obtained on copper-metallized silicon substrates using an radio frequency-reactive sputter-deposition technique. Residual tensile stresses were found in both the copper layer and the ZnO layer. The ZnO nanowires were observed exclusively at the grain boundaries of the ZnO thin films. The average diameter of ZnO nanowires varies only slightly with the ZnO deposition time, while the average length increases linearly with the ZnO deposition time. Based on the observations a growth model involving stress-assisted diffusion of copper and reaction-controlled catalytic growth of ZnO nanowires is suggested.

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