scholarly journals Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

2018 ◽  
Vol 654 ◽  
pp. 77-84 ◽  
Author(s):  
Buguo Wang ◽  
Z.-Q. Fang ◽  
Bruce Claflin ◽  
David Look ◽  
John Kouvetakis ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
High Vacuum ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Transient Spectroscopy

Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
M. Ahoujja ◽  
S. Elhamri ◽  
R. Berney ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Metalorganic Chemical

ABSTRACTElectrical properties of As, Si, and [As+Si] doped GaN films grown on sapphire substrates by low temperature metalorganic chemical vapor deposition have been investigated using temperature dependent Hall-effect and deep level transient spectroscopy measurements. The Hall measurements from the GaN layers show that the concentration decreases with arsine flow (4, 40, and 400 sccm) at all temperatures. The carrier concentration of the Si-doped GaN, on the other hand, increases with the incorporation of arsine flow. This behavior is attributed to the formation of AsGa antisites which act as double donors. A deep level at around 0.82 eV below the conduction in the band gap of As doped GaN is measured by DLTS and is tentatively assigned to arsenic on gallium antisite.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

2019 ◽  
Vol 507 ◽  
pp. 113-117 ◽  
Author(s):  
Jiaqi Wang ◽  
Limeng Shen ◽  
Guangyang Lin ◽  
Jianyuan Wang ◽  
Jianfang Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum

Water Desorption from Magnesium Oxide Films Fabricated by Chemical Vapor Deposition

2006 ◽  
Vol 11-12 ◽  
pp. 693-696 ◽  
Author(s):  
S. Kawaguchi ◽  
K.C. Namiki ◽  
S. Ohshio ◽  
Junichi Nishino ◽  
H. Saitoh
Keyword(s):  
Chemical Vapor Deposition ◽  
Magnesium Oxide ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Secondary Electron Emission ◽  
Film Surface ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Water Desorption ◽  
Plasma Sputtering

Magnesium oxide (MgO) films are utilized for the anti-plasma sputtering coating with excellent ability of secondary electron emission in plasma display panels (PDP). These properties are degraded by the impurities adsorbed on the film surface. Therefore, we should obtain impurity-free surface during the PDP manufacturing process. We have synthesized whisker and continuous film types of metal oxide using a chemical vapor deposition (CVD) method operated under atmosphere. In this study, a temperature programmed desorption method has been applied to detect residual species adsorbed on the surface of the present films in the ultra-high vacuum atmosphere. The amount of water adsorption was determined by this method.

scholarly journals Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

2007 ◽  
Vol 2 (3) ◽  
pp. 149-154
Author(s):  
Rui Wang ◽  
Soon Fatt Yoon ◽  
Fen Lu ◽  
Wei Jun Fan ◽  
Chong Yang Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Coupling Effect ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Sige Quantum Wells
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