Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition

High quality ultraviolet AlGaN∕GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers

2008 ◽  
Vol 93 (13) ◽  
pp. 131116 ◽  
Author(s):  
Zhen-Yu Li ◽  
Ming-Hua Lo ◽  
C. T. Hung ◽  
Shih-Wei Chen ◽  
Tien-Chang Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Quality ◽  
Layer Deposition

AlGaN/GaN multiple quantum wells grown by atomic-layer deposition

2008 ◽  
Author(s):  
M. H. Lo ◽  
Z. Y. Li ◽  
J. R. Chen ◽  
T. S. Ko ◽  
T. C. Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Layer Deposition

AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ming-Hua Lo ◽  
Zhen-Yu Li ◽  
Shih-Wei Chen ◽  
Jhih-Cang Hong ◽  
Ting-Chang Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Atomic Force Microscope Image ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

ABSTRACTIn this work, we report on the growth of ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AlN/GaN superlattices (SLs). The root-mean-square value of the surface morphology was only 0.35 nm observed from the atomic force microscope image and no crack was found on the surface. Both of the high resolution X-ray diffraction curves and transmission electron microscope images showed sharp interfaces between SLs layers and QWs with good periodicity. These results demonstrate that the ALD could be a very useful technique for controlling the crystalline quality and thickness of the III-nitride epilayer.

scholarly journals Magneto-optical characterization of ZnO / Ni nano-laminate obtained via Atomic Layer Deposition

2021 ◽  
Vol 1762 (1) ◽  
pp. 012041
Author(s):  
K Buchkov ◽  
A Galluzzi ◽  
B Blagoev ◽  
A Paskaleva ◽  
P Terziyska ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Layer Deposition

Optical Characterization of a 20 Layer AlGaAs/GaAs Multiple Quantum Wells

2018 ◽  
Vol 73 (5) ◽  
pp. 632-637
Author(s):  
Luqman Ali ◽  
Janghyun Cho ◽  
Clare Chisu Byeon ◽  
Jin Dong Song ◽  
Hyun-Jun Jo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate

2017 ◽  
Vol 111 (11) ◽  
pp. 111101 ◽  
Author(s):  
Thomas Wunderer ◽  
Zhihong Yang ◽  
Martin Feneberg ◽  
Max Batres ◽  
Mark Teepe ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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