AlGaN/GaN multiple quantum wells grown by atomic-layer deposition

2008 ◽  
Author(s):  
M. H. Lo ◽  
Z. Y. Li ◽  
J. R. Chen ◽  
T. S. Ko ◽  
T. C. Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Layer Deposition

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition

High quality ultraviolet AlGaN∕GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers

2008 ◽  
Vol 93 (13) ◽  
pp. 131116 ◽  
Author(s):  
Zhen-Yu Li ◽  
Ming-Hua Lo ◽  
C. T. Hung ◽  
Shih-Wei Chen ◽  
Tien-Chang Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Quality ◽  
Layer Deposition

AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ming-Hua Lo ◽  
Zhen-Yu Li ◽  
Shih-Wei Chen ◽  
Jhih-Cang Hong ◽  
Ting-Chang Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Atomic Force Microscope Image ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

ABSTRACTIn this work, we report on the growth of ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AlN/GaN superlattices (SLs). The root-mean-square value of the surface morphology was only 0.35 nm observed from the atomic force microscope image and no crack was found on the surface. Both of the high resolution X-ray diffraction curves and transmission electron microscope images showed sharp interfaces between SLs layers and QWs with good periodicity. These results demonstrate that the ALD could be a very useful technique for controlling the crystalline quality and thickness of the III-nitride epilayer.

Scanning tunneling spectroscopy of lead sulfide quantum wells fabricated by atomic layer deposition

2010 ◽  
Vol 21 (48) ◽  
pp. 485402 ◽  
Author(s):  
Wonyoung Lee ◽  
Neil P Dasgupta ◽  
Hee Joon Jung ◽  
Jung-Rok Lee ◽  
Robert Sinclair ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Lead Sulfide ◽  
Atomic Layer ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Layer Deposition

Atomic Layer Epitaxy of ZnSe-(CdSe)m(ZnSe)nShort-Period Superlattice Multiple Quantum Wells

1992 ◽  
Vol 31 (Part 2, No. 11B) ◽  
pp. L1583-L1585 ◽  
Author(s):  
Zhongling Peng ◽  
Jie Li ◽  
Wenhua Yao ◽  
Li He ◽  
Xingyu Cheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Atomic Layer ◽  
Multiple Quantum Wells ◽  
Atomic Layer Epitaxy ◽  
Multiple Quantum

STRAIN ENERGY BAND ENGINEERING APPROACH TO AlN/GaN/InN HETEROJUNCTION DEVICES

2002 ◽  
Vol 12 (02) ◽  
pp. 401-419
Author(s):  
ASIF KHAN ◽  
J. W. YANG ◽  
G. SIMIN ◽  
R. GASKA ◽  
M. S. SHUR
Keyword(s):  
Quantum Wells ◽  
Energy Band ◽  
Atomic Layer ◽  
Optical Quality ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Band Engineering ◽  
Engineering Approach ◽  
Improved Performance ◽  
Pulsed Atomic Layer Epitaxy

Our new Strain and Energy Band Engineering approach allows us to control, modulate or eliminate the strain thereby significantly enhancing the performance of electronic and optoelectronic devices on SiC and sapphire substrates using a new-pulsed atomic layer epitaxy procedure. New types of high power high temperature transistors with improved performance were fabricated XRD, PL and AFM spectra are used to establish a high structural and optical quality of die quaternary multiple quantum wells. We have also demonstrated the use of PALE deposited quaternary AlInGaN multiple quantum wells in the active region of a UV LED with emission ranging from 305 nm to 304 nm.

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