Elastic modulus and hardness of cubic GaN grown by molecular beam epitaxy obtained by nanoindentation

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

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Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

Physics Letters A ◽

10.1016/s0375-9601(02)00619-9 ◽

2002 ◽

Vol 299 (1) ◽

pp. 79-84 ◽

Cited By ~ 4

Author(s):

M Xu ◽

C.X Liu ◽

H.F Liu ◽

G.M Luo ◽

X.M Chen ◽

...

Keyword(s):

Thermal Stability ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Cubic Gan ◽

Gan Film ◽

Thermal Stability Of

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Molecular beam epitaxy based growth of cubic GaN quantum dots

physica status solidi (c) ◽

10.1002/pssc.201000904 ◽

2011 ◽

Vol 8 (5) ◽

pp. 1495-1498 ◽

Cited By ~ 14

Author(s):

T. Schupp ◽

T. Meisch ◽

B. Neuschl ◽

M. Feneberg ◽

K. Thonke ◽

...

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Cubic Gan

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Interference and electro-optical effects in cubic GaN/GaAs heterostructures prepared by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/5.0007489 ◽

2020 ◽

Vol 128 (12) ◽

pp. 125706

Author(s):

B. E. Zendejas-Leal ◽

Y. L. Casallas-Moreno ◽

C. M. Yee-Rendon ◽

G. I. González-Pedreros ◽

J. Santoyo-Salazar ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Optical Effects ◽

Cubic Gan

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An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

Materials Science Forum ◽

10.4028/www.scientific.net/msf.264-268.1173 ◽

1998 ◽

Vol 264-268 ◽

pp. 1173-1176 ◽

Cited By ~ 16

Author(s):

B. Schöttker ◽

J. Kühler ◽

Donat J. As ◽

D. Schikora ◽

K. Lischka

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Accurate Method ◽

Growth Conditions ◽

Cubic Gan

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Growth of Cubic GAN on (001) GAAS

MRS Proceedings ◽

10.1557/proc-395-27 ◽

1995 ◽

Vol 395 ◽

Cited By ~ 13

Author(s):

O. Brandt ◽

H. Yang ◽

A. Trampert ◽

K. H. Ploog

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Stacking Faults ◽

Desorption Rate ◽

Natural Consequence ◽

Subsequent Growth ◽

Nucleation Stage ◽

Cubic Gan ◽

Kinetics Of ◽

Microscopic Surface

ABSTRACTWe present a study of the growth of cubic GaN films on (001) GaAs by molecular beam epitaxy. Our investigations focus on the nucleation stage as well as on the subsequent growth of GaN. The phenomenon of epitaxial growth at this extreme mismatch (20%) is demonstrated to arise from a coincidence lattice between GaAs and GaN. The presence of a high-density of stacking faults in the GaN layer is explained within this understanding as being a natural consequence of the coalescence of perfectly relaxed nuclei. We furthermore analyze the growth kinetics of GaN via the surface reconstruction transitions observed upon an impinging Ga flux, from which we obtain both the desorption rate of Ga as well as the diffusion coefficient of Ga adatoms on the Ga-stabilized GaN surface. The diffusivity of Ga is found to be very low at the growth temperatures commonly used during molecular beam epitaxy, which provides an explanation for the microscopic surface roughness observed on our samples.

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