Growth of Cubic GAN on (001) GAAS

1995 ◽  
Vol 395 ◽  
Author(s):  
O. Brandt ◽  
H. Yang ◽  
A. Trampert ◽  
K. H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Desorption Rate ◽  
Natural Consequence ◽  
Subsequent Growth ◽  
Nucleation Stage ◽  
Cubic Gan ◽  
Kinetics Of ◽  
Microscopic Surface

ABSTRACTWe present a study of the growth of cubic GaN films on (001) GaAs by molecular beam epitaxy. Our investigations focus on the nucleation stage as well as on the subsequent growth of GaN. The phenomenon of epitaxial growth at this extreme mismatch (20%) is demonstrated to arise from a coincidence lattice between GaAs and GaN. The presence of a high-density of stacking faults in the GaN layer is explained within this understanding as being a natural consequence of the coalescence of perfectly relaxed nuclei. We furthermore analyze the growth kinetics of GaN via the surface reconstruction transitions observed upon an impinging Ga flux, from which we obtain both the desorption rate of Ga as well as the diffusion coefficient of Ga adatoms on the Ga-stabilized GaN surface. The diffusivity of Ga is found to be very low at the growth temperatures commonly used during molecular beam epitaxy, which provides an explanation for the microscopic surface roughness observed on our samples.

Epitaxial growth of cubic GaN and AlN on Si(001)

1996 ◽  
Vol 1 ◽  
Author(s):  
A. Barski ◽  
U. Rössner ◽  
J. L. Rouviere ◽  
M. Arlery
Keyword(s):  
Thermal Treatment ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Stacking Faults ◽  
Subsequent Growth ◽  
Cubic Form ◽  
Cubic Gan ◽  
Very High ◽  
Resonance Plasma

Thermal treatment under propane at 1300-1400 °C has been used to prepare Silicon (001) wafers for subsequent growth of cubic GaN and AlN by Electron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECRMBE). Thermal treatment of Silicon wafers under propane, used in this experiment, produced a very thin (40 Å) layer of cubic SiC on the Silicon (001) surface. Despite an extremely low thickness of as-produced SiC layer, high quality cubic GaN has been successfully grown. The cubic form of AlN grown on the SiC(40Å)/Si(001) surface has also been observed despite a very high density of stacking faults.

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

2002 ◽  
Vol 299 (1) ◽  
pp. 79-84 ◽  
Author(s):  
M Xu ◽  
C.X Liu ◽  
H.F Liu ◽  
G.M Luo ◽  
X.M Chen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan ◽  
Gan Film ◽  
Thermal Stability Of

Molecular beam epitaxy based growth of cubic GaN quantum dots

2011 ◽  
Vol 8 (5) ◽  
pp. 1495-1498 ◽  
Author(s):  
T. Schupp ◽  
T. Meisch ◽  
B. Neuschl ◽  
M. Feneberg ◽  
K. Thonke ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan

Elastic modulus and hardness of cubic GaN grown by molecular beam epitaxy obtained by nanoindentation

2020 ◽  
Vol 699 ◽  
pp. 137915 ◽  
Author(s):  
S.A. García Hernández ◽  
V.D. Compeán García ◽  
E. López Luna ◽  
M.A. Vidal
Keyword(s):  
Elastic Modulus ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cubic Gan

Interference and electro-optical effects in cubic GaN/GaAs heterostructures prepared by molecular beam epitaxy

2020 ◽  
Vol 128 (12) ◽  
pp. 125706
Author(s):  
B. E. Zendejas-Leal ◽  
Y. L. Casallas-Moreno ◽  
C. M. Yee-Rendon ◽  
G. I. González-Pedreros ◽  
J. Santoyo-Salazar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Effects ◽  
Cubic Gan
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