Role of oxygen partial pressure on structure and properties of sputtered transparent conducting films of La-doped BaSnO3

2020 ◽  
Vol 703 ◽  
pp. 137986 ◽  
Author(s):  
Alok Tiwari ◽  
Ming-Show Wong
2012 ◽  
Vol 258 (14) ◽  
pp. 5354-5359 ◽  
Author(s):  
Yongjian Zhang ◽  
Zhengtang Liu ◽  
Liping Feng ◽  
Duyang Zang

2008 ◽  
Vol 93 (19) ◽  
pp. 192906 ◽  
Author(s):  
Varatharajan Anbusathaiah ◽  
Ching Jung Cheng ◽  
Sung Hwan Lim ◽  
Makoto Murakami ◽  
Lourdes G. Salamanca-Riba ◽  
...  

1983 ◽  
Vol 22 (4) ◽  
pp. 565-570 ◽  
Author(s):  
Fabrizio Cavani ◽  
Gabriele Centi ◽  
Italo Manenti ◽  
Alfredo Riva ◽  
Ferruccio Trifiro

1991 ◽  
Vol 243 ◽  
Author(s):  
Chi Kong Kwok ◽  
Seshu B. Desu

AbstractThe properties of ferroelectric thin films can be significantly influenced by the presence of point defects. The concentration of vacancies presented in these thin films is known to be one of the key parameters causing the degradation of these films when these films are subjected to polarization reversals.To study the effects of the vacancy concentration on the ferroelectric properties, sol gel PZT films and powders were annealed in different oxygen partial pressures. For the PZT films, the reduction of oxides to pure metals was not observed even with films annealed at 2×10−5 atmosphere of oxygen partial pressure. Samples annealed at low oxygen partial pressure (for instance, 10−3 and 2×10−5 atmosphere), which has more Pb and O2 depletions and consequently has more Pb and O2 vacancies, cannot be switched easily. The ratios of coercive field after and before fatigue increase as the defect concentrations of the annealed samples increase.


2008 ◽  
Vol 205 (8) ◽  
pp. 1957-1960
Author(s):  
P. Parreira ◽  
J. Valente ◽  
G. Lavareda ◽  
C. Nunes de Carvalho ◽  
A. R. Ramos ◽  
...  

1997 ◽  
Vol 22 (6) ◽  
pp. 1065-1073 ◽  
Author(s):  
Paola Palozza ◽  
Chiara Luberto ◽  
Gabriella Calviello ◽  
Paola Ricci ◽  
Gianna Maria Bartoli

2011 ◽  
Vol 13 (10) ◽  
pp. 4583-4590 ◽  
Author(s):  
J. A. De Toro ◽  
J. P. Andrés ◽  
J. A. González ◽  
J. M. Riveiro ◽  
M. Estrader ◽  
...  

2014 ◽  
Vol 26 (26) ◽  
pp. 4575-4581 ◽  
Author(s):  
Hyung Ouk Choi ◽  
Dae Woo Kim ◽  
Seon Joon Kim ◽  
Seung Bo Yang ◽  
Hee-Tae Jung

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