Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and InxGa1−xAs/GaAs strained quantum wells

Vacuum ◽  
2004 ◽  
Vol 74 (2) ◽  
pp. 263-267 ◽  
Author(s):  
B. Ściana ◽  
D. Radziewicz ◽  
B. Paszkiewicz ◽  
M. Tłaczała ◽  
P. Sitarek ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Movpe Growth

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5–1.9 µm)

1999 ◽  
Vol 33 (9) ◽  
pp. 1007-1009
Author(s):  
Z. N. Sokolova ◽  
D. A. Vinokurov ◽  
I. S. Tarasov ◽  
N. A. Gun’ko ◽  
G. G. Zegrya
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Strained Quantum Wells

Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells

1998 ◽  
Vol 184-185 ◽  
pp. 863-866 ◽  
Author(s):  
Jun Suda ◽  
Masahiro Ogawa ◽  
Keiichiro Sakurai ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Light Hole ◽  
Strained Quantum Wells

Valence-Subband Structure of Strained Quantum Wells

1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 3043-3050 ◽  
Author(s):  
Matsuto Ogawa ◽  
Tanroku Miyoshi
Keyword(s):  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Subband Structure
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