Optical Gain in Type-II InAsN/GaSb Strained Quantum Wells Laser Diodes and Its Pressure Dependence

2017 ◽  
pp. 1-1
Author(s):  
Amira Ben Ahmed ◽  
Hosni Saidi ◽  
Melek Msahli ◽  
Said Ridene
Keyword(s):  
Quantum Wells ◽  
Pressure Dependence ◽  
Laser Diodes ◽  
Optical Gain ◽  
Type Ii ◽  
Strained Quantum Wells

Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 [micro sign]m at room temperature

1996 ◽  
Vol 32 (24) ◽  
pp. 2279 ◽  
Author(s):  
A.N. Baranov ◽  
Y. Cuminal ◽  
G. Boissier ◽  
C. Alibert ◽  
A. Joullié
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Laser Diodes ◽  
Type Ii ◽  
Low Threshold

Direct type II–indirect type I conversion of InP/GaAs/InP strained quantum wells induced by hydrostatic pressure

1991 ◽  
Vol 59 (7) ◽  
pp. 806-808 ◽  
Author(s):  
M. Gerling ◽  
M.‐E. Pistol ◽  
L. Samuelson ◽  
W. Seifert ◽  
J.‐O. Fornell ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Strained Quantum Wells

Pressure dependence of photoluminescence in InxGa1 − xAs/AlyGa1 − yAs strained quantum wells with different widths

1994 ◽  
Vol 37 (4-6) ◽  
pp. 885-888 ◽  
Author(s):  
Zhen-Xian Liu ◽  
Guo-Hua Li ◽  
He-Xiang Han ◽  
Zhao-Ping Wang
Keyword(s):  
Quantum Wells ◽  
Pressure Dependence ◽  
Strained Quantum Wells

Type-II AlInN/ZnGeN2 quantum wells for ultraviolet laser diodes

2019 ◽  
Vol 126 (13) ◽  
pp. 133103 ◽  
Author(s):  
Hanlin Fu ◽  
Justin C. Goodrich ◽  
Onoriode Ogidi-Ekoko ◽  
Nelson Tansu
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Type Ii ◽  
Ultraviolet Laser
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