Development and test of 2.45 GHz microwave ion source based intense ion beam experimental facility

Vacuum ◽  
2016 ◽  
Vol 124 ◽  
pp. 55-59 ◽  
Author(s):  
Narender Kumar ◽  
G. Rodrigues ◽  
Y. Mathur ◽  
S. Ojha ◽  
R. Ahuja ◽  
...  
2011 ◽  
Author(s):  
Shuhei Taguchi ◽  
Yasuhito Gotoh ◽  
Hiroshi Tsuji ◽  
Shigeki Sakai ◽  
Junzo Ishikawa ◽  
...  

1995 ◽  
Vol 66 (10) ◽  
pp. 4911-4915 ◽  
Author(s):  
M. Tanaka ◽  
K. Miyake ◽  
N. Sakudo ◽  
K. Kobayashi ◽  
H. Ohkawa

Vacuum ◽  
1988 ◽  
Vol 38 (6) ◽  
pp. 487-490 ◽  
Author(s):  
K Tokiguchi ◽  
K. Amemiya ◽  
H. Koike ◽  
N. Sakudo ◽  
T. Seki

Shinku ◽  
2003 ◽  
Vol 46 (9) ◽  
pp. 708-711
Author(s):  
Takeshi SHIBAHARA ◽  
Masayoshi ABIKO ◽  
Yasuhito GOTOH ◽  
Hiroshi TSUJI ◽  
Junzo ISHIKAWA

Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.


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