Demonstration of non-negligible oxygen exchange in the thermal oxidation of silicon carbide

Vacuum ◽  
2021 ◽  
Vol 191 ◽  
pp. 110403
Author(s):  
Nannan You ◽  
Xinyu Liu ◽  
Yun Bai ◽  
Qian Zhang ◽  
Peng Liu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Oxygen Exchange

Silicon Carbide Base Ceramic Fiber Synthesis from Polycarbosilane-Modified Polymethylsilane Blend Polymers by Melt Spinning

2011 ◽  
Vol 675-677 ◽  
pp. 139-142
Author(s):  
Xin Xing ◽  
Lin Liu ◽  
Feng Cao ◽  
Xiao Dong Li ◽  
Zeng Yong Chu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Tensile Strength ◽  
Thermal Oxidation ◽  
Melt Spinning ◽  
Ceramic Fiber ◽  
Ceramic Yield ◽  
Base Ceramic

A melt-spinnable precursor for SiC based fibers was prepared from blend polymers of polycarbosilane (PCS) and modified polymethylsilane (M-PMS). The blend polymers cured at 320°C are different from M-PMS and PCS. The ceramic yield of these blend polymers is about 83%. The C/Si ratio of M-PMS/PCS derived ceramics (pyrolyzed at 1250°C) is linear to the content of MPMS in M-PMS/PCS. After melt spinning, thermal oxidation curing, and pyrolysis, Si-C-O fibers were obtained. The diameter and the tensile strength of the resulted fibers are 16.5μm and 1.62GPa, respectively.

UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

1999 ◽  
Vol 2 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Carl-Mikael Zetterling ◽  
Mikael Östling ◽  
Chris I Harris ◽  
Peter C Wood ◽  
S.Simon Wong
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Type Silicon ◽  
P Type ◽  
Uv Ozone

Thermal oxidation of silicon carbide with surface modification by the molecular layering method

Refractories ◽  
1985 ◽  
Vol 26 (1-2) ◽  
pp. 82-84 ◽  
Author(s):  
L. V. Miroshnichenko ◽  
A. A. Malygin ◽  
S. I. Kol'tsov
Keyword(s):  
Silicon Carbide ◽  
Surface Modification ◽  
Thermal Oxidation ◽  
Molecular Layering

Enhanced oxygen exchange near the oxide/silicon interface during silicon thermal oxidation

2007 ◽  
Vol 515 (16) ◽  
pp. 6596-6600 ◽  
Author(s):  
Masashi Uematsu ◽  
Marika Gunji ◽  
Masaru Tsuchiya ◽  
Kohei M. Itoh
Keyword(s):  
Thermal Oxidation ◽  
Oxygen Exchange ◽  
Silicon Interface

The rate-limiting step in the thermal oxidation of silicon carbide

2010 ◽  
Vol 62 (9) ◽  
pp. 654-657 ◽  
Author(s):  
Junjie Wang ◽  
Litong Zhang ◽  
Qingfeng Zeng ◽  
Gérard L. Vignoles ◽  
Laifei Cheng ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Rate Limiting Step ◽  
Limiting Step ◽  
Rate Limiting

Thermal Oxidation of Sputtered Silicon Carbide Thin Films

1984 ◽  
Vol 131 (8) ◽  
pp. 1907-1914 ◽  
Author(s):  
W. ‐J. Lu ◽  
A. J. Steckl ◽  
T. P. Chow ◽  
W. Katz
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Thermal Oxidation

Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide

2001 ◽  
Vol 174 (3-4) ◽  
pp. 210-216 ◽  
Author(s):  
A Koh ◽  
A Kestle ◽  
C Wright ◽  
S.P Wilks ◽  
P.A Mawby ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Surface Studies
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