UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

1999 ◽  
Vol 2 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Carl-Mikael Zetterling ◽  
Mikael Östling ◽  
Chris I Harris ◽  
Peter C Wood ◽  
S.Simon Wong
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Type Silicon ◽  
P Type ◽  
Uv Ozone

Effects of Si interlayer conditions on platinum ohmic contacts for p-type silicon carbide

2002 ◽  
Vol 31 (5) ◽  
pp. 506-511 ◽  
Author(s):  
T. Jang ◽  
J. W. Erickson ◽  
L. M. Porter
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Type Silicon ◽  
P Type

Irradiation and annealing of p-type silicon carbide

2014 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Elena V. Bogdanova ◽  
Maria V. Grigor'eva ◽  
Sergey P. Lebedev ◽  
Vitaly V. Kozlovski
Keyword(s):  
Silicon Carbide ◽  
Type Silicon ◽  
P Type

Long term stability of gate-oxides on n- and p-type silicon carbide studied by charge injection techniques

1997 ◽  
Vol 46 (1-3) ◽  
pp. 263-266 ◽  
Author(s):  
E.G. Stein von Kamienski ◽  
C. Leonhard ◽  
F. Portheine ◽  
A. Gölz ◽  
H. Kurz
Keyword(s):  
Silicon Carbide ◽  
Charge Injection ◽  
Gate Oxides ◽  
Term Stability ◽  
Long Term Stability ◽  
Type Silicon ◽  
Injection Techniques ◽  
P Type

Thermal oxidation of n- and p-type 6H-silicon carbide

1994 ◽  
Vol T54 ◽  
pp. 291-293 ◽  
Author(s):  
C -M Zetterling ◽  
M Östling
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
P Type

Thermal oxidation of silicon carbide: A comparison of n-type and p-type doped epitaxial layers

2011 ◽  
Vol 98 (4) ◽  
pp. 042109 ◽  
Author(s):  
Xiao-An Fu ◽  
Kenji Okino ◽  
Mehran Mehregany
Keyword(s):  
Silicon Carbide ◽  
Thermal Oxidation ◽  
Epitaxial Layers ◽  
P Type
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